Download or read book A Study on Gate Oxide and Extension Region of Carbon Nanotube Field Effect Transistor written by Zichen Zhang and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: To fulfill the huge demand from data-abundant applications such as machine learning and computer vision, transistors with higher density, energy efficiency and performance were required by modern integrated circuits (ICs). However, traditional metal oxide semiconductor field effect transistors (MOSFETs) have been scaled down to the atomic limit. Low dimensional materials are good candidates which allow people to keep scaling down due to their excellent electrical properties and stability. Carbon nanotube, one kind of one dimensional (1D) material which attracts many attentions from the researchers due to its intrinsic thin channel body and excellent carrier transport properties. However, the inert surface property of CNT makes depositing robust, low leakage and low EOT gate oxides extremely challenging. Furthermore, as-made carbon nanotube field effect transistors (CNTFETs) are intrinsically p-type due to the electron withdrawal effects. A robust n-type CNTFETs was required to achieve complementary logic. This thesis focuses on the process of using atomic layer deposition (ALD) to deposit gate oxides and the process of using plasma enhanced chemical vapor deposition (PECVD) to dope the CNTFETs extension region.

Download or read book Carbon Nanotube Field Effect Transistor written by Fouad Sabry and published by One Billion Knowledgeable. This book was released on 2022-07-10 with total page 500 pages. Available in PDF, EPUB and Kindle. Book excerpt: What Is Carbon Nanotube Field Effect Transistor A carbon nanotube field-effect transistor, also known as a CNTFET, is a kind of field-effect transistor that makes use of a single carbon nanotube or an array of carbon nanotubes as the channel material in place of bulk silicon, as is done in the conventional MOSFET construction. Since they were first exhibited in 1998, there have been significant advancements in CNTFET technology. How You Will Benefit (I) Insights, and validations about the following topics: Chapter 1: Carbon nanotube field-effect transistor Chapter 2: Carbon nanotube Chapter 3: JFET Chapter 4: Schottky barrier Chapter 5: Electron mobility Chapter 6: Nanoelectromechanical systems Chapter 7: Threshold voltage Chapter 8: Organic field-effect transistor Chapter 9: Ballistic conduction Chapter 10: Hybrid solar cell Chapter 11: Potential applications of carbon nanotubes Chapter 12: Carbon nanotubes in photovoltaics Chapter 13: Optical properties of carbon nanotubes Chapter 14: Carbon nanotube nanomotor Chapter 15: NanoIntegris Chapter 16: Ballistic conduction in single-walled carbon nanotubes Chapter 17: Tunnel field-effect transistor Chapter 18: Field-effect transistor Chapter 19: Carbon nanotubes in interconnects Chapter 20: Synthesis of carbon nanotubes Chapter 21: Vertically aligned carbon nanotube arrays (II) Answering the public top questions about carbon nanotube field effect transistor. (III) Real world examples for the usage of carbon nanotube field effect transistor in many fields. (IV) 17 appendices to explain, briefly, 266 emerging technologies in each industry to have 360-degree full understanding of carbon nanotube field effect transistor' technologies. Who This Book Is For Professionals, undergraduate and graduate students, enthusiasts, hobbyists, and those who want to go beyond basic knowledge or information for any kind of carbon nanotube field effect transistor.

Download or read book Carbon Based Electronics written by Ashok Srivastava and published by CRC Press. This book was released on 2015-03-19 with total page 153 pages. Available in PDF, EPUB and Kindle. Book excerpt: Discovery of one-dimensional material carbon nanotubes in 1991 by the Japanese physicist Dr. Sumio Iijima has resulted in voluminous research in the field of carbon nanotubes for numerous applications, including possible replacement of silicon used in the fabrication of CMOS chips. One interesting feature of carbon nanotubes is that these can be me

Download or read book Carbon Nanotube Electronics written by Ali Javey and published by Springer Science & Business Media. This book was released on 2009-04-21 with total page 275 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a complete overview of the field of carbon nanotube electronics. It covers materials and physical properties, synthesis and fabrication processes, devices and circuits, modeling, and finally novel applications of nanotube-based electronics. The book introduces fundamental device physics and circuit concepts of 1-D electronics. At the same time it provides specific examples of the state-of-the-art nanotube devices.

Download or read book Major Applications of Carbon Nanotube Field Effect Transistors CNTFET written by Raj, Balwinder and published by IGI Global. This book was released on 2019-12-06 with total page 255 pages. Available in PDF, EPUB and Kindle. Book excerpt: With recent advancements in electronics, specifically nanoscale devices, new technologies are being implemented to improve the properties of automated systems. However, conventional materials are failing due to limited mobility, high leakage currents, and power dissipation. To mitigate these challenges, alternative resources are required to advance electronics further into the nanoscale domain. Carbon nanotube field-effect transistors are a potential solution yet lack the information and research to be properly utilized. Major Applications of Carbon Nanotube Field-Effect Transistors (CNTFET) is a collection of innovative research on the methods and applications of converting semiconductor devices from micron technology to nanotechnology. The book provides readers with an updated status on existing CNTs, CNTFETs, and their applications and examines practical applications to minimize short channel effects and power dissipation in nanoscale devices and circuits. While highlighting topics including interconnects, digital circuits, and single-wall CNTs, this book is ideally designed for electrical engineers, electronics engineers, students, researchers, academicians, industry professionals, and practitioners working in nanoscience, nanotechnology, applied physics, and electrical and electronics engineering.

Download or read book Leakage Current Characterization and Projection in Carbon Nanotube Transistors written by Qing Lin (Researcher in electrical engineering) and published by . This book was released on 2023 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Carbon nanotubes (CNTs) are promising candidates as channel materials for extremely-scaled technology nodes due to their naturally 1-nm thin body and high charge carrier mobility. Moreover, the low-temperature fabrication (i.e., > 400 °C) of CNT field effect transistors (CNFETs) enables monolithic three-dimensional (3D) ultra-dense integration of logic and memory, leading to energy and throughput benefits at the application level. However, CNFETs suffer from large off-state leakage due to small effective mass and band gap. While much progress has been made in improving the on-state current of CNFETs, there is a lack of benchmarking their off-state current. The off-state leakage is often under-estimated in simulation models, which ignore additional tunneling contribution in CNFETs. While strategies for suppressing leakage exist, the control of off-state current has yet to be demonstrated. This thesis aims to address the leakage challenge in CNFETs through a comprehensive leakage study encompassing: (1) characterization of leakage current; (2) calibration of simulation models; and (3) projection of low-leakage design space. In this dissertation, I will present a systematic study of the following leakage mechanisms in carbon nanotube MOSFETs: Gate Leakage -- To mitigate the gate leakage, a gate oxide bilayer for CNT is employed consisting of a 0.35 nm interfacial dielectric (k = 7.8) and 2.5 nm high-k dielectric (k = 24). Gate leakage was reduced to below 1 pA/CNT at 10 nm gate length and 0.7 V supply voltage, surpassing the technology target requirements. Superior electrostatic control of 65 mV/dec subthreshold slope and 20 mV/V drain-induced barrier lowering (DIBL) were achieved in top-gated CNT MOSFETs at 15 nm gate length. Band-to-Band Tunneling (BTBT) -- The BTBT leakage in CNT MOSFETs is influenced strongly by the CNT band gap, supply voltage, and extension doping level. However, existing studies typically estimate the CNT band gap indirectly from the CNT diameter, resulting in limited accuracy due to various band gap-diameter approximations. To address this, a novel direct CNT band gap extraction method is developed. The lower limit of off-state current was measured in electrostatically-doped CNT MOSFETs across a range of band gaps, supply voltages, and extension doping levels. A non-equilibrium Green's function (NEGF) model confirms the dependence of BTBT leakage on CNT band gap, supply voltage, and extension doping level. Based on the calibrated NEGF model, a leakage current design space is projected for long-channel CNT MOSFETs, enabling identification of appropriate device design choices across CNT band gap, supply voltage, and extension doping. Source-Drain Tunneling (SDT) -- Short-channel CNT MOSFETs with gate lengths ranging rom 6.5 nm to 14.0 nm were fabricated, as simulations predict significant SDT leakage below 12 nm gate length. Temperature-dependent electrical measurements from 6.5 K to 300 K were used to distinguish between short-channel effects and source-drain tunneling. Three short-channel MOSFETs were examined as examples, demonstrating different temperature dependencies and the extent of SDT.

Download or read book Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor written by Iraj Sadegh Amiri and published by Springer. This book was released on 2017-10-29 with total page 92 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book discusses analytical approaches and modeling of the breakdown voltage (BV) effects on graphene-based transistors. It presents semi-analytical models for lateral electric field, length of velocity saturation region (LVSR), ionization coefficient (α), and breakdown voltage (BV) of single and double-gate graphene nanoribbon field effect transistors (GNRFETs). The application of Gauss’s law at drain and source regions is employed in order to derive surface potential and lateral electric field equations. LVSR is then calculated as a solution of surface potential at saturation condition. The ionization coefficient is modelled and calculated by deriving equations for probability of collisions in ballistic and drift modes based on the lucky drift theory of ionization. The threshold energy of ionization is computed using simulation and an empirical equation is derived semi-analytically. Lastly avalanche breakdown condition is employed to calculate the lateral BV. On the basis of this, simple analytical and semi-analytical models are proposed for the LVSR and BV, which could be used in the design and optimization of semiconductor devices and sensors. The proposed equations are used to examine BV at different channel lengths, supply voltages, oxide thickness, GNR widths, and gate voltages. Simulation results show that the operating voltage of FETs could be as low as 0.25 V in order to prevent breakdown. However, after optimization, it can go as high as 1.5 V. This work is useful for researchers working in the area of graphene nanoribbon-based transistors.

Download or read book Quantum Theory Modeling Analysis and Design of Carbon Nanotube Field Effect Transistors written by Khairul Alam and published by . This book was released on 2006 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Study of Carbon NanoTube Field Effect Transistors for NEMS written by Hasina F. Huq and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The development and the dimensions of carbon nanotubes make the transistor a challenge to develop and to control the aspects of it, such as threshold voltage, maximum drain current, maximum transconductance. The investigated characteristics of CNTFETs represent its viability into transistor applications for NEMS switches, memory cells, field emission displays, biomedical instruments etc (Singh, 2005). Even with pessimistic assumptions,

Download or read book Carbon Nanotube and Graphene Device Physics written by H.-S. Philip Wong and published by Cambridge University Press. This book was released on 2010-12-23 with total page 263 pages. Available in PDF, EPUB and Kindle. Book excerpt: Explaining the properties and performance of practical nanotube devices and related applications, this is the first introductory textbook on the subject. All the fundamental concepts are introduced, so that readers without an advanced scientific background can follow all the major ideas and results. Additional topics covered include nanotube transistors and interconnects, and the basic physics of graphene. Problem sets at the end of every chapter allow readers to test their knowledge of the material covered and gain a greater understanding of the analytical skill sets developed in the text. This is an ideal textbook for senior undergraduate and graduate students taking courses in semiconductor device physics and nanoelectronics. It is also a perfect self-study guide for professional device engineers and researchers.

Download or read book Physics of Semiconductor Devices written by V. K. Jain and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 841 pages. Available in PDF, EPUB and Kindle. Book excerpt: The purpose of this workshop is to spread the vast amount of information available on semiconductor physics to every possible field throughout the scientific community. As a result, the latest findings, research and discoveries can be quickly disseminated. This workshop provides all participating research groups with an excellent platform for interaction and collaboration with other members of their respective scientific community. This workshop’s technical sessions include various current and significant topics for applications and scientific developments, including • Optoelectronics • VLSI & ULSI Technology • Photovoltaics • MEMS & Sensors • Device Modeling and Simulation • High Frequency/ Power Devices • Nanotechnology and Emerging Areas • Organic Electronics • Displays and Lighting Many eminent scientists from various national and international organizations are actively participating with their latest research works and also equally supporting this mega event by joining the various organizing committees.

Download or read book Study of Carbon NanoTube Field Effect Transistors for NEMS written by Hasina F. Huq and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Study of Carbon NanoTube Field Effect Transistors for NEMS.

Download or read book A Systematic Study and Design Guidelines for Carbon Nanotube Field effect Transistor Based Circuits written by Yi-Chieh Chen and published by . This book was released on 2008 with total page 122 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Effects of Differing Carbon Nanotube Field effect Transistor Architectures written by and published by . This book was released on 2009 with total page 16 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Graphene and Carbon Nanotube Field Effect Transistors written by and published by . This book was released on 2012 with total page 115 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Nanoscale Transistors written by Mark Lundstrom and published by Springer Science & Business Media. This book was released on 2006-06-18 with total page 223 pages. Available in PDF, EPUB and Kindle. Book excerpt: To push MOSFETs to their scaling limits and to explore devices that may complement or even replace them at molecular scale, a clear understanding of device physics at nanometer scale is necessary. Nanoscale Transistors provides a description on the recent development of theory, modeling, and simulation of nanotransistors for electrical engineers, physicists, and chemists working on nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors. After basic concepts are reviewed, the text summarizes the essentials of traditional semiconductor devices, digital circuits, and systems to supply a baseline against which new devices can be assessed. A nontraditional view of the MOSFET using concepts that are valid at nanoscale is developed and then applied to nanotube FET as an example of how to extend the concepts to revolutionary nanotransistors. This practical guide then explore the limits of devices by discussing conduction in single molecules

Download or read book Carbon Nanotube Devices written by and published by John Wiley & Sons. This book was released on 2008-05-05 with total page 384 pages. Available in PDF, EPUB and Kindle. Book excerpt: Following on from the first AMN volume, this handy reference and textbook examines the topic of nanosystem design in further detail. It explains the physical and chemical basics behind the design and fabrication of nanodevices, covering all important, recent advances in the field, while introducing nanosystems to less experienced readers. The result is an important source for a fast, accurate overview of the state of the art of nanosystem realization, summarizing further important literature.