Download or read book A Study of the Role of Low Energy Ions in Causing Damage to III V Semiconductors in Practical Ion Etching Systems written by Ligang Deng and published by . This book was released on 2000 with total page 132 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Index to Theses with Abstracts Accepted for Higher Degrees by the Universities of Great Britain and Ireland and the Council for National Academic Awards written by and published by . This book was released on 2001 with total page 404 pages. Available in PDF, EPUB and Kindle. Book excerpt: Theses on any subject submitted by the academic libraries in the UK and Ireland.
Download or read book British National Bibliography for Report Literature written by and published by . This book was released on 2001 with total page 806 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Encyclopedia of Chemical Physics and Physical Chemistry written by John H. Moore and published by CRC Press. This book was released on 2023-07-03 with total page 715 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Encyclopedia of Physical Chemistry and Chemical Physics introduces possibly unfamiliar areas, explains important experimental and computational techniques, and describes modern endeavors. The encyclopedia quickly provides the basics, defines the scope of each subdiscipline, and indicates where to go for a more complete and detailed explanation. Particular attention has been paid to symbols and abbreviations to make this a user-friendly encyclopedia. Care has been taken to ensure that the reading level is suitable for the trained chemist or physicist. The encyclopedia is divided in three major sections: FUNDAMENTALS: the mechanics of atoms and molecules and their interactions, the macroscopic and statistical description of systems at equilibrium, and the basic ways of treating reacting systems. The contributions in this section assume a somewhat less sophisticated audience than the two subsequent sections. At least a portion of each article inevitably covers material that might also be found in a modern, undergraduate physical chemistry text. METHODS: the instrumentation and fundamental theory employed in the major spectroscopic techniques, the experimental means for characterizing materials, the instrumentation and basic theory employed in the study of chemical kinetics, and the computational techniques used to predict the static and dynamic properties of materials. APPLICATIONS: specific topics of current interest and intensive research. For the practicing physicist or chemist, this encyclopedia is the place to start when confronted with a new problem or when the techniques of an unfamiliar area might be exploited. For a graduate student in chemistry or physics, the encyclopedia gives a synopsis of the basics and an overview of the range of activities in which physical principles are applied to chemical problems. It will lead any of these groups to the salient points of a new field as rapidly as possible and gives pointers as to where to read about the topic in more detail.
Download or read book Etching of III V Semiconductors written by Peter H. L. Notten and published by Elsevier Science & Technology. This book was released on 1991 with total page 376 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chlorine Reactive Ion Beam Etching Studies of Indium containing III V Materials written by Eugene E. Lemoine and published by . This book was released on 1995 with total page 134 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Etching Chemistry of III V Semiconductors and the Development of Surface Roughness written by and published by . This book was released on 1998 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This research addresses the need for fundamental information concerning halogen etching of III-V semiconductors. The reactions of halogens with semiconductor surfaces are the fundamental chemical interactions in processes employed for device manufacture. In this work, the reactions of XeF2, Cl2 and I2 with III-V semiconductor surfaces were investigated with synchrotron-based soft x-ray photoelectron spectroscopy, low energy electron diffraction and scanning tunneling microscopy. Fluorine reaction grows films of group III fluorides, which can be used as dielectric materials. Chlorine is the most widely used halogen for dry etching, while iodine has been proposed for use as a "gentle" etchant. We found that, for all of the halogen reactions, the initial adsorption depends on the surface reconstruction, stoichiometry and condition. Some surfaces passivate, while others spontaneously etch at room temperature. The passivated surfaces are well-ordered and covered with approximately one monolayer of adsorbed halogen. The etched surfaces, on the other hand, are considerably rough and atomically disordered. A microscopic model is proposed which assumes that halogen atoms preferentially adsorb onto a group III atom if the surface is initially well-ordered. This microscopic model can explain why certain surfaces etch, while others form ordered overlayers.
Download or read book Physics Briefs written by and published by . This book was released on 1994 with total page 1224 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Application of Ion Beams in Materials Science written by Takashi Sebe and published by . This book was released on 1988 with total page 564 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Dry Etching Technology for Semiconductors written by Kazuo Nojiri and published by Springer. This book was released on 2014-10-25 with total page 126 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is a must-have reference to dry etching technology for semiconductors, which will enable engineers to develop new etching processes for further miniaturization and integration of semiconductor integrated circuits. The author describes the device manufacturing flow, and explains in which part of the flow dry etching is actually used. The content is designed as a practical guide for engineers working at chip makers, equipment suppliers and materials suppliers, and university students studying plasma, focusing on the topics they need most, such as detailed etching processes for each material (Si, SiO2, Metal etc) used in semiconductor devices, etching equipment used in manufacturing fabs, explanation of why a particular plasma source and gas chemistry are used for the etching of each material, and how to develop etching processes. The latest, key technologies are also described, such as 3D IC Etching, Dual Damascene Etching, Low-k Etching, Hi-k/Metal Gate Etching, FinFET Etching, Double Patterning etc.
Download or read book Characterization of Reactive Ion Etching of III V Compound Semiconductor Materials written by Ebrahim Andideh and published by . This book was released on 1990 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt: Reactive ion etching (RIE) of III-V compound semiconductor materials such as InP, InGaAs, InAlAs, and InGaAsP in methane (CH$sb4$) gas mixtures has been investigated. Etch rates of 800, 400 and 600 A are obtained for InP, InGaAs, and InGaAsP, respectively. Optimum processes have been developed for reliable fabrication of uniform short period gratings with smooth etched surfaces and excellent stoichiometry in these compounds. Highly anisotropic structures with dimensions down to 300 A at a pitch of 600 A are demonstrated in InP. A selective RIE process for InGaAs on InAlAs in a CH$sb4$:H$sb2$ plasma has been developed and utilized to fabricate 0.26 $mu$m T-gate modulation doped field-effect transistors (MODFETs). The microwave measurements of reactive-ion-etched and wet-etched devices show identical performance. The RIE of GaAs and AlGaAs have been characterized in SiCl$sb4$ plasma chemistry. The optical, electrical and chemical properties of the etched materials have been investigated. The effects of different RIE parameters such as gas chemistry, RF power, and reactor pressure have been studied. The RIE of laser facets in the GaAs/AlGaAs/InGaAs material system and the growth on RIE-patterned GaAs substrates are reported. Selective RIE of GaAs on AlGaAs in SiCl$sb4$/SiF$sb4$ plasma is studied. A selectivity ratio of 350:1 has been obtained at low power. A small decrease in the saturation current of gateless MODFET structures has been observed after etching the GaAs cap layer and has been ascribed to low energy ion bombardment of the surface. This process is applied to the fabrication of 0.2 $mu$m T-gate pseudomorphic MODFETs. The dc and microwave performances of RIE and wet-etched devices are identical. For these short-gatelength devices, a threshold voltage standard deviation of only 30 mV is obtained for the reactive-ion-etched devices as compared to 230 mV for the wet-etched devices. This uniform distribution is essential to the realization of integrated circuits. Surface analysis methods, such as scanning electron microscopy (SEM), Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), secondary ion mass spectroscopy (SIMS), and Fourier transform infra-red spectroscopy (FTIR), have been utilized extensively to determine the chemistry of etched surfaces. Raman spectroscopy, Hall carrier mobility measurement and photoluminescence spectroscopy indicate insignificant electrical damage to the materials under optimal RIE conditions. Results of the surface analysis have been used to delineate optimum processes for the fabrication of the above devices.
Download or read book INIS Atomindex written by and published by . This book was released on 1988 with total page 902 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Characterization of the Chemically Assisted Ion Beam Etching of III V Semiconductors written by Timothy Jon Dow and published by . This book was released on 1993 with total page 150 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ion Solid Interactions written by Michael Nastasi and published by Cambridge University Press. This book was released on 1996-03-29 with total page 572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Comprehensive guide to an important materials science technique for students and researchers.
Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1997 with total page 1860 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Semiconductor Material and Device Characterization written by Dieter K. Schroder and published by John Wiley & Sons. This book was released on 2015-06-29 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
