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Book Proceedings of the Second Symposium on Thin Film Transistor Technologies

Download or read book Proceedings of the Second Symposium on Thin Film Transistor Technologies written by Yue Kuo and published by The Electrochemical Society. This book was released on 1995 with total page 428 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Thin Film Transistor Technologies VI

Download or read book Thin Film Transistor Technologies VI written by Yue Kuo and published by The Electrochemical Society. This book was released on 2003 with total page 324 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Thin Film Transistor Technologies

Download or read book Thin Film Transistor Technologies written by Yue Kuo and published by The Electrochemical Society. This book was released on 1999 with total page 448 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Thin Film Transistor Technologies TFTT VII

Download or read book Thin Film Transistor Technologies TFTT VII written by Yue Kuo and published by The Electrochemical Society. This book was released on 2005 with total page 340 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Chemical Abstracts

Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2540 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Fabrication and Analysis of Bottom Gate Nanocrystalline Silicon Thin Film Transistors

Download or read book Fabrication and Analysis of Bottom Gate Nanocrystalline Silicon Thin Film Transistors written by Kyung-Wook Shin and published by . This book was released on 2008 with total page 71 pages. Available in PDF, EPUB and Kindle. Book excerpt: Thin film transistors (TFTs) have brought prominent growth in both variety and utility of large area electronics market over the past few decades. Nanocrystalline silicon (nc-Si:H) TFTs have attracted attention recently, due to high-performance and low-cost, as an alternative of amorphous silicon (a-Si:H) and polycrystalline silicon (poly-Si) TFTs. The nc-Si:H TFTs has higher carrier mobility and better device stability than a-Si:H TFTs while lower manufacturing cost than poly-Si TFTs. However, current nc-Si:TFTs have several challenging issues on materials and devices, on which this thesis focuses. In the material study, the gate quality silicon nitride (a-SiNx) films and doped nc-Si:H contacts based on conventional plasma enhanced chemical vapor deposition (PECVD) are investigated. The feasibility of a-SiNx on TFT application is discussed with current-voltage (I-V)/capacitance-voltage(C-V) measurement and Fourier Transform Infrared Spectroscopy (FTIR) results which demonstrate 4.3 MV/cm, relative permittivity of 6.15 and nitrogen rich composition. The doped nc-Si:H for contact layer of TFTs is characterized with Raman Spectroscopy and I-V measurements to reveal 56 % of crystalinity and 0.42 S/cm of dark conductivity. Inverted staggered TFT structure is fabricated for nc-Si:H TFT device research using fully wet etch fabrication process which requires five lithography steps. The process steps are described in detail as well as adaptation of the fabrication process to a backplane fabrication for direct conversion X-ray imagers. The modification of TFT process for backplane fabrication involves two more lithography steps for mushroom electrode formation while other pixel components is incorporated into the five lithography step TFT process. The TFTs are electrically characterized demonstrating 7.22 V of threshold voltage, 0.63 S/decade of subthreshold slope, 0.07 cm2/V-s of field effect mobility, and 106 of on/off ratio. The transfer characteristics of TFTs reveal a severe effect of parasitic resistance which is induced from channel layer itself, a contact between channel layer and doped nc-Si:H contact layer, the resistance of doped nc-Si:H contact layer, and a contact between the doped nc-Si:H layer and source/drain metal electrodes. The parasitic resistance effect is investigated using numerical simulation method by various parasitic resistances, channel length of the TFT, and intrinsic properties of nc-Si:H channel layer. It reveals the parasitic resistance effect become severe when the channel is short and has better quality, therefore, several further research topics on improving contact nc-Si:H quality and process adjustment are required.

Book Japanese Journal of Applied Physics

Download or read book Japanese Journal of Applied Physics written by and published by . This book was released on 2004 with total page 1216 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Design Synthesis and Structure Property Relationship Study of Polymer Field Effect Transistors

Download or read book Design Synthesis and Structure Property Relationship Study of Polymer Field Effect Transistors written by Ting Lei and published by Springer. This book was released on 2015-01-05 with total page 124 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book summarizes Ting Lei’s PhD study on a series of novel conjugated polymers for field-effect transistors (FETs). Studies contain many aspects of polymer FETs, including backbone design, side-chain engineering, property study, conformation effects and device fabrication. The research results have previously scattered in many important journals and conferences worldwide. The book is likely to be of interest to university researchers, engineers and graduate students in materials sciences and chemistry who wish to learn some principles, strategy, and applications of polymer FETs.

Book Novel Processes for Poly si Thin film Transistors on Plastic Substrates

Download or read book Novel Processes for Poly si Thin film Transistors on Plastic Substrates written by Daniel Albert Good and published by . This book was released on 2007 with total page 228 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Thin Film Transistor Technologies V

Download or read book Thin Film Transistor Technologies V written by Yue Kuo and published by The Electrochemical Society. This book was released on 2001 with total page 356 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Proceedings of the Third Symposium on Thin Film Transistor Technologies

Download or read book Proceedings of the Third Symposium on Thin Film Transistor Technologies written by Yue Kuo and published by The Electrochemical Society. This book was released on 1997 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: