Download or read book A Study of the Amorphization of Silicon by Ion Implantation written by John Robert Dennis and published by . This book was released on 1976 with total page 125 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Model Correction for the Formation of Amorphous Silicon by Ion Implantation written by John Robert Dennis and published by . This book was released on 1973 with total page 31 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Studies on Amorphizing Silicon Using Silicon Ion Implantation written by N. C. Fernelius and published by . This book was released on 1985 with total page 54 pages. Available in PDF, EPUB and Kindle. Book excerpt: Studies of various conditions to create amorphous Si regions suitable for recrystallization of 0.3 micron and 0.5 micron Si films were made on the Varian 400-10AR Ion Implanter in the Avionics Laboratory and on the General Ionex Corporation 1.7 MeV Tandetron accelerator at Universal Energy Systems. Experimentally, cooling the sample substrate was found to be very important to achieving amorphous regions in the sample. Toward the end of this effort, Dow Corning heat sink compound RTV 340 was found to be a superior mounting medium to rubber cement. Keywords include: Ion Implantation, Silicon, Amorphous, Rutherford Backscattering, and Thin Films.

Download or read book The Formation of Amorphous Silicon by Light Ion Damage written by Yih-Cheng Shih and published by . This book was released on 1986 with total page 298 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon Carbide Device Fabrication Based on Amorphization Using Ion Implantation written by Dev Alok and published by . This book was released on 1996 with total page 462 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book A Model of the Recrystallization Mechanism of Amorphous Silicon Layers Created by Ion Implantation written by Robert M. Drosd and published by . This book was released on 1979 with total page 202 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Mechanisms for Amorphous State Formation in Ion Implanted Silicon written by Edward B. Hale and published by . This book was released on 1978 with total page 8 pages. Available in PDF, EPUB and Kindle. Book excerpt: A summary is given of the results obtained on this grant. Various experiments were performed to better understand the mechanisms which are important to the crystalline to amorphous transformation produced by ion implantation. From these experiments have emerged several important concepts and processes. These have been reported in several publications and talks, and it has been possible to interpret the results in terms of a composite model for the amorphization transformation.

Download or read book Silicon Technologies written by Annie Baudrant and published by John Wiley & Sons. This book was released on 2013-05-10 with total page 378 pages. Available in PDF, EPUB and Kindle. Book excerpt: The main purpose of this book is to remind new engineers in silicon foundry, the fundamental physical and chemical rules in major Front end treatments: oxidation, epitaxy, ion implantation and impurities diffusion.

Download or read book Temperature Dependence of the Formation of an Amorphous Layer in Ion implanted Silicon written by Gary Keith Woodward and published by . This book was released on 1973 with total page 79 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Pre amorphization Damage in Ion implanted Silicon written by Robert Jan Schreutelkamp and published by . This book was released on 1991 with total page 92 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Structural Characterization of Amorphous Silicon written by Bianca Haberl and published by . This book was released on 2010 with total page 480 pages. Available in PDF, EPUB and Kindle. Book excerpt: The structure of amorphous silicon (a-Si) has attracted wide interest over the recent decades. This substantial interest is twofold. Firstly, a-Si has many, highly significant, technological applications. Secondly, physically it is a fundamentally interesting material which has been regarded as a model system of a covalently bonded continuous random network (CRN). Such a CRN is a random network in which each atom has full four-fold coordination as the only specific structural feature. More recently, improvement of techniques has allowed greater insight into the structural properties of a-Si. Intriguing deviations, not only from the ideal CRN, but especially between different forms of a-Si have been observed. However, to date it remains unclear to what extent the formation method of a-Si influences its structural order. Another critically important parameter in the nature of a-Si is its thermal history. For example, a-Si formed by ion-implantation undergoes structural relaxation - or short-range ordering - upon thermal annealing to a new state that is close to an ideal CRN. It remains unclear however, if other forms of a-Si undergo structural relaxation to the same degree. Thus, despite its widespread use and decades of research, the exact nature of a-Si is still not fully understood and this thesis addresses this topic. Different forms of a-Si was prepared by deposition techniques, rapid quenching from the melt and solid-state amorphization. These different forms were investigated in their as-prepared state as well as in their thermally annealed. A combination of techniques was used, namely nanoindentation, electron-energy-loss spectroscopy, Raman microspectroscopy, electron diffraction and fluctuation electron microscopy. All forms of a-Si were first probed for their uniformity. Films prepared by plasma-enhanced chemical vapour deposition and by rapid quenching from the melt were found to contain voids and nanocrystals which prevented the study of their structural properties. More uniform films prepared by magnetron-sputtering, ion-implantation and the so-called pressure-induced (PI) a-Si however, were studied in depth for their structural properties. Each as-prepared form of a-Si was found to have a unique network with very different structural properties. The magnetron-sputtered a-Si was observed to have significant microstructure. The pure ion-implanted a-Si however, is free of such microstructure although some inhomogeneities are clearly present within the network. Interestingly, PI a-Si possesses very little order on the entire length-scale. Only uniform, pure forms of a-Si without any microstructure undergo structural relaxation upon annealing. In the case of the other forms of a-Si, the presence of voids and nanopores seems to prevent the formation of a more ideal CRN. Intriguingly, for the pure cases however, the structural relaxation results in essentially the same properties for both networks over the entire length-scale. These findings were used to build a framework for the understanding of the structure of a-Si. Such a framework is a first step towards more realistic structural models since without detailed experimental data no assertive validation of any model is possible. Therefore, this framework is expected to advance the understanding of the structure of a-Si as well as other covalently bonded amorphous semiconductors.

Download or read book Model of the Recrystallization Mechanism of Amorphous Silicon Layers Created by Ion Implantation written by and published by . This book was released on 1979 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The recrystallization behavior during annealing of thin films of amorphous (.cap alpha.) silicon, in contact with a single crystal silicon substrate (referred to as C), has been studied in the transmission electron microscope (TEM). The amorphous film is created during high dose phosphorus ion implantation at 100 keV. It was found that the crystal substrate orientation and the implantation temperature have dramatic effects on the recrystallizaton rate, and the defect microstructure produced during annealing. Specifically, (100) wafers implanted at 77°K contain only a low density of dislocation loops, but when the same wafer is implanted at room temperature the dislocation density is increased drastically. (111) wafers, when implanted at 77°K show a high density of microtwins, but as the implantation temperature is increased a gradual increase in the density of dislocation loops is observed along with a reduction of the microtwins. At an implantation temperature of about 100°C both orientations give an identical defect microstructure when annealed, which is a dense tangle of dislocations.

Download or read book Formation of Amorphous Silicon by Light Ion Damage written by and published by . This book was released on 1985 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Amorphization by implantation of boron ions (which is the lightest element generally used in I.C. fabrication processes) has been systematically studied for various temperatures, various voltages and various dose rates. Based on theoretical considerations and experimental results, a new amorphization model for light and intermediate mass ion damage is proposed consisting of two stages. The role of interstitial type point defects or clusters in amorphization is emphasized. Due to the higher mobility of interstitials out-diffusion to the surface particularly during amorphization with low energy can be significant. From a review of the idealized amorphous structure, diinterstitial-divacancy pairs are suggested to be the embryos of amorphous zones formed during room temperature implantation. The stacking fault loops found in specimens implanted with boron at room temperature are considered to be the origin of secondary defects formed during annealing.

Download or read book Proceedings of the Fourth International Symposium of Process Physics and Modeling in Semiconductor Technology written by G. R. Srinivasan and published by The Electrochemical Society. This book was released on 1996 with total page 546 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Amorphization and the Effect of Implanted Ions in SiC written by and published by . This book was released on 1994 with total page 7 pages. Available in PDF, EPUB and Kindle. Book excerpt: The effects of implanted ion chemistry and displacement damage on the amorphization threshold dose of SiC were studied using cross-section transmission electron microscopy. Room temperature as well as 200 and 400 C irradiations were carried out with 3.6 MeV Fe, 1.8 MeV Cl, 1 MeV He or 0.56 MeV Si ions. The room temperature amorphization threshold dose in irradiated regions well separated from the implanted ions was found to range from 0.3 to 0.5 dpa for the four different ion species. The threshold dose for amorphization in the He, Si and Fe ion-implanted regions was also (approximately)0.3 to 0.5 dpa. On the other hand, the amorphization threshold in the Cl-implanted region was only about 0.1 dpa. The volume change associated with amorphization was (approximately)17%. No evidence for amorphization was obtained in specimens irradiated at 200 or 400 C. An understanding of the microstructural evolution of SiC under irradiation is critical to the application of these materials in fusion energy systems.

Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1975 with total page 1396 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Ion Implantation Technology 94 written by S. Coffa and published by Newnes. This book was released on 1995-05-16 with total page 1031 pages. Available in PDF, EPUB and Kindle. Book excerpt: The aim of these proceedings is to present and stimulate discussion on the many subjects related to ion implantation among a broad mix of specialists from areas as diverse as materials science, device production and advanced ion implanters.The contents open with a paper on the future developments of the microelectronics industry in Europe within the framework of the global competition. The subsequent invited and oral presentations cover in detail the following areas: trends in processing and devices, ion-solid interaction, materials science issues, advanced implanter systms, process control and yield, future trends and applications.