Download or read book A Study of Spice Parameter Extraction for MOSFET Modeling with Emphasis on Small Geometry Effects in MOSFETS written by Christopher Anthony Freymuth and published by . This book was released on 1985 with total page 184 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book A study of spice parameter extraction for MOSFET modeling with emphasis on small geometry effects in MOSFETS written by Christopher A. Freymuth and published by . This book was released on 1987 with total page 92 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Mosfet Modeling For Vlsi Simulation Theory And Practice written by Narain Arora and published by World Scientific. This book was released on 2007-02-14 with total page 633 pages. Available in PDF, EPUB and Kindle. Book excerpt: A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations.The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs.
Download or read book Masters Abstracts International written by and published by . This book was released on 1986 with total page 604 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book MOSFET Models for VLSI Circuit Simulation written by Narain D. Arora and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 628 pages. Available in PDF, EPUB and Kindle. Book excerpt: Metal Oxide Semiconductor (MOS) transistors are the basic building block ofMOS integrated circuits (I C). Very Large Scale Integrated (VLSI) circuits using MOS technology have emerged as the dominant technology in the semiconductor industry. Over the past decade, the complexity of MOS IC's has increased at an astonishing rate. This is realized mainly through the reduction of MOS transistor dimensions in addition to the improvements in processing. Today VLSI circuits with over 3 million transistors on a chip, with effective or electrical channel lengths of 0. 5 microns, are in volume production. Designing such complex chips is virtually impossible without simulation tools which help to predict circuit behavior before actual circuits are fabricated. However, the utility of simulators as a tool for the design and analysis of circuits depends on the adequacy of the device models used in the simulator. This problem is further aggravated by the technology trend towards smaller and smaller device dimensions which increases the complexity of the models. There is extensive literature available on modeling these short channel devices. However, there is a lot of confusion too. Often it is not clear what model to use and which model parameter values are important and how to determine them. After working over 15 years in the field of semiconductor device modeling, I have felt the need for a book which can fill the gap between the theory and the practice of MOS transistor modeling. This book is an attempt in that direction.
Download or read book BSIM4 and MOSFET Modeling for IC Simulation written by Weidong Liu and published by World Scientific. This book was released on 2011 with total page 435 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the art of advanced MOSFET modeling for integrated circuit simulation and design. It provides the essential mathematical and physical analyses of all the electrical, mechanical and thermal effects in MOS transistors relevant to the operation of integrated circuits. Particular emphasis is placed on how the BSIM model evolved into the first ever industry standard SPICE MOSFET model for circuit simulation and CMOS technology development. The discussion covers the theory and methodology of how a MOSFET model, or semiconductor device models in general, can be implemented to be robust and efficient, turning device physics theory into a production-worthy SPICE simulation model. Special attention is paid to MOSFET characterization and model parameter extraction methodologies, making the book particularly useful for those interested or already engaged in work in the areas of semiconductor devices, compact modeling for SPICE simulation, and integrated circuit design.
Download or read book MOSFET Parameter Extraction and Spice Modeling written by Sai Subhash Sripada and published by . This book was released on 2015 with total page 65 pages. Available in PDF, EPUB and Kindle. Book excerpt: This paper proposes a simple extraction technique which can be used to extract device parameters of any power MOSFET easily. It only requires the use of transfer and output characteristic graphs to extract threshold voltage and transconductance and a few formulas to extract the parasitic capacitances of the power device. The extraction technique is presented in an easy to understand step by step procedure. The parameters extracted using this process are used to develop a spice model. Transient analysis is done for the extracted model and the resistive switching performance is compared with the datasheet in order to prove the effectiveness of the extraction technique used. Inductive switching is also done for the extracted model and the effect of varying the parameters of the MOSFET on inductive switching times is observed. Finally, this observation is then used to develop a new mathematical SiC power MOSFET model which has better inductive switching times than the extracted model and the thesis is concluded.
Download or read book Transistor Level Modeling for Analog RF IC Design written by Wladyslaw Grabinski and published by Springer Science & Business Media. This book was released on 2006-07-01 with total page 298 pages. Available in PDF, EPUB and Kindle. Book excerpt: The editors and authors present a wealth of knowledge regarding the most relevant aspects in the field of MOS transistor modeling. The variety of subjects and the high quality of content of this volume make it a reference document for researchers and users of MOSFET devices and models. The book can be recommended to everyone who is involved in compact model developments, numerical TCAD modeling, parameter extraction, space-level simulation or model standardization. The book will appeal equally to PhD students who want to understand the ins and outs of MOSFETs as well as to modeling designers working in the analog and high-frequency areas.
Download or read book MOSFET Modeling with SPICE written by Daniel Foty and published by Prentice Hall. This book was released on 1997 with total page 680 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book will help CMOS circuit designers make the best possible use of SPICE models, and will prepare them for new models that may soon be introduced. Introduces SPICE modeling and its use in CMOS circuit design. Presents the formalism of model building and the semiconductor physics of MOS structures. Covers each important SPICE model, showing how to choose the appropriate model. Discusses the popular HSPICE Level 28, as well as Levels 1-3, BSIM 1-3, and MOS Model 9. Presents techniques for accounting for systematic process variations. Describes new model candidates, including the Power-Lane Model, the PCIM Model, and the EKV Model. Includes extensive examples throughout. Practicing engineers and scientists in the semiconductor industry; engineering faculty and students.
Download or read book MOSFET Modeling Simulation and Parameter Extraction in 4H 6H Silicon Carbide written by and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis presents the work on analytical modeling and simulation of a silicon carbide (SiC) power MOSFET, model verification with test data, and device characterization and parameter extraction of the SPICE model. The development of temperature models for a lateral as well as a vertical MOSFET in SiC are also presented. The model takes into account the various short channel effects in the DIMOS channel region as well as the velocity saturation effect in the drift region. Considering the SiC material processing limitations and feedback from the system level application group, an application specific SiC power MOSFET structure has been proposed. The device dimensions were chosen to obtain the desired specific on-resistance and breakdown voltage of the power MOSFET. A good agreement between the analytical model and the MEDICI simulation is demonstrated. The temperature models include effects of temperature on the threshold voltage, carrier mobility, the body leakage current, and the drain and source contact region resistances for a lateral MOSFET and the effects of temperature on the threshold voltage, carrier mobility, the body leakage current, drift region resistance and channel resistance for a vertical MOSFET. The temperature dependent compensating current elements are introduced in the model. These compensating currents contribute to the total current at high temperatures. A rigorous testing and characterization has been carried out on a 4H-SiC DIMOS transistor test device. SPICE parameters have been extracted from the measurements and a SPICE model for the DIMOS transistor has been developed. The models developed in this research will not only help the SiC device researchers in the device behavioral study but will also provide a SPICE model for circuit designers.
Download or read book SPICE Parameter Extraction for MOSFET Modeling in Analog Circuit Design written by Wen Lu and published by . This book was released on 1998 with total page 200 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Science Abstracts written by and published by . This book was released on 1993 with total page 980 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Compact Modeling written by Gennady Gildenblat and published by Springer Science & Business Media. This book was released on 2010-06-22 with total page 531 pages. Available in PDF, EPUB and Kindle. Book excerpt: Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.
Download or read book MOSFET Models for SPICE Simulation written by William Liu and published by Wiley-IEEE Press. This book was released on 2001-02-21 with total page 608 pages. Available in PDF, EPUB and Kindle. Book excerpt: An expert guide to understanding and making optimum use of BSIM Used by more chip designers worldwide than any other comparable model, the Berkeley Short-Channel IGFET Model (BSIM) has, over the past few years, established itself as the de facto standard MOSFET SPICE model for circuit simulation and CMOS technology development. Yet, until now, there have been no independent expert guides or tutorials to supplement the various BSIM manuals currently available. Written by a noted expert in the field, this book fills that gap in the literature by providing a comprehensive guide to understanding and making optimal use of BSIM3 and BSIM4. Drawing upon his extensive experience designing with BSIM, William Liu provides a brief history of the model, discusses the various advantages of BSIM over other models, and explores the reasons why BSIM3 has been adopted by the majority of circuit manufacturers. He then provides engineers with the detailed practical information and guidance they need to master all of BSIM's features. He: Summarizes key BSIM3 components Represents the BSIM3 model with equivalent circuits for various operating conditions Provides a comprehensive glossary of modeling terminology Lists alphabetically BSIM3 parameters along with their meanings and relevant equations Explores BSIM3's flaws and provides improvement suggestions Describes all of BSIM4's improvements and new features Provides useful SPICE files, which are available online at the Wiley ftp site
Download or read book Analysis and Design of MOSFETs written by Juin Jei Liou and published by Springer Science & Business Media. This book was released on 1998-09-30 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, researchers and engineers. Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction, extensively referenced, and containing more than 180 illustrations, is an innovative and integral new book on MOSFETs design technology.
Download or read book Index to IEEE Publications written by Institute of Electrical and Electronics Engineers and published by . This book was released on 1990 with total page 848 pages. Available in PDF, EPUB and Kindle. Book excerpt: Issues for 1973- cover the entire IEEE technical literature.
Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1997 with total page 1948 pages. Available in PDF, EPUB and Kindle. Book excerpt:
