Download or read book A Study of Silicon Carbide with Special Emphasis on Its High Temperature Oxidation written by Edwin F. Sharpe and published by . This book was released on 1955 with total page 92 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The High Temperature Oxidation of Silicon Carbide written by Lewis Henry Keys and published by . This book was released on 1968 with total page 194 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Oxidation of Continuous Carbon Fibers Within a Silicon Carbide Matrix Under Stressed and Unstressed Conditions written by Michael C. Halbig and published by . This book was released on 2000 with total page 18 pages. Available in PDF, EPUB and Kindle. Book excerpt: Carbon fiber reinforced silicon carbide matrix composites (C/SiC) are a ceramic matrix composite (CMC) material that offers benefits for use in a wide range of high temperature structural applications. However the susceptibility of the carbon fibers to degradation in oxidizing environments has hindered the material's use in certain applications requiring long lives under oxidizing conditions. The susceptibility of carbon fibers to oxidation will be discussed as well as the enhancement (improvement in oxidation resistance) of C/SiC materials. Thermogravimetric analysis of carbon fibers shows susceptibility to oxidation in two distinct kinetic regimes. However, in the thermogravimetric (wt. loss) analysis of unstressed, unenhanced, seal coated C/SiC coupons, the two regimes were not observed due to crack closure and matrix effects, which inhibited the oxidation process. Stressed oxidation (creep rupture) tests put the material under a stress, which is a more realistic condition for many applications. In stressed oxidation tests, the two oxidation kinetics regimes were observed. These tests can provide better insight into how the material will perform in applications involving stress. Stressed oxidation of enhanced materials containing oxidation inhibitors showed significantly improved lives at the specific test conditions considered, although there was susceptibility to oxidation at intermediate temperatures.

Download or read book The Physics and Chemistry of SiO2 and the Si SiO2 Interface 2 written by B.E. Deal and published by Springer Science & Business Media. This book was released on 2013-11-09 with total page 505 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first international symposium on the subject "The Physics and Chemistry of Si02 and the Si-Si02 Interface," organized in association with the Electrochemical Society, Inc. , was held in Atlanta, Georgia on May 15- 20, 1988. This symposium contained sixty papers and was so successful that the sponsoring divisions decided to schedule it on a regular basis every four years. Thus, the second symposium on "The Physics and Chemistry of Si02 and the Si02 Interface was held May 18-21, 1992 in St. Louis, Missouri, again sponsored by the Electronics and Dielectrics Science and Technology Divisions of The Electrochemical Society. This volume contains manuscripts of most of the fifty nine papers presented at the 1992 symposium, and is divided into eight chapters - approximating the organization of the symposium. Each chapter is preceded with an introduction by the session organizers. It is appropriate to provide a general assessment of the current status and understanding of the physics and chemistry of Si02 and the Si02 interface before proceeding with a brief overview of the individual chapters. Semiconductor devices have continued to scale down in both horizontal and vertical dimensions. This has resulted in thinner gate and field oxides as well as much closer spacing of individual device features. As a result, surface condition, native oxide composition, and cleaning and impurity effects now provide a much more significant contribution to the properties of oxides and their interfaces.

Download or read book Developments in High Temperature Corrosion and Protection of Materials written by W Gao and published by Elsevier. This book was released on 2008-04-09 with total page 677 pages. Available in PDF, EPUB and Kindle. Book excerpt: High temperature corrosion is a phenomenon that occurs in components that operate at very high temperatures, such as gas turbines, jet engines and industrial plants. Engineers are constantly striving to understand and prevent this type of corrosion. This book examines the latest developments in the understanding of high temperature corrosion processes and protective oxide scales and coatings. Part one looks at high temperature corrosion. Chapters cover diffusion and solid state reactions, external and internal oxidation of alloys, metal dusting corrosion, tribological degradation, hot corrosion, and oxide scales on hot-rolled steel strips. Modern techniques for analysing high temperature oxidation and corrosion are also discussed. Part two discusses methods of protection using ceramics, composites, protective oxide scales and coatings. Chapters focus on layered ternary ceramics, alumina scales, Ti-Al intermetallic compounds, metal matrix composites, chemical vapour deposited silicon carbide, nanocrystalline coatings and thermal barrier coatings. Part three provides case studies illustrating some of the challenges of high temperature corrosion to industry and how they can be overcome. Case studies include the petrochemical industry, modern incinerators and oxidation processing of electronic materials. This book is a valuable reference tool for engineers who develop heat resistant materials, mechanical engineers who design and maintain high temperature equipment and plant, and research scientists and students who study high temperature corrosion and protection of materials. Describes the latest developments in understanding high temperature corrosion Presents the latest research by the leading innovators from around the globe Case studies are provided to illustrate key points

Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-09-23 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.

Download or read book High Temperature Oxidation of Silicon Carbide written by Warren J. Miller (1LT, USAF.) and published by . This book was released on 1972 with total page 110 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon Carbide Ceramics 1 written by S. Somiya and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 300 pages. Available in PDF, EPUB and Kindle. Book excerpt: Discovered by Edward G. Acheson about 1890, silicon carbide is one of the oldest materials and also a new material. It occurs naturally in meteorites, but in very small amounts and is not in a useable state as an industrial material. For industrial require ments, large amounts of silicon carbide must be synthesized by solid state reactions at high temperatures. Silicon carbide has been used for grinding and as an abrasive material since its discovery. During World War II, silicon carbide was used as a heating element; however, it was difficult to obtain high density sintered silicon carbide bodies. In 1974, S. Prochazka reported that the addition of small amounts of boron compounds and carbide were effective in the sintering process to obtain high density. It was then possible to produce high density sintered bodies by pressureless sintering methods in ordinary atmosphere. Since this development, silicon carbide has received great attention as one of the high temperature structural ceramic materials. Since the 1970s, many research papers have appeared which report studies of silicon carbide and silicon nitride for structural ceramics.

Download or read book Advances in Silicon Carbide Processing and Applications written by Stephen E. Saddow and published by Artech House. This book was released on 2004 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt: Learn the latest advances in SiC (Silicon Carbide) technology from the leading experts in the field with this new cutting-edge resource. The book is your single source for in-depth information on both SiC device fabrication and system-level applications. This comprehensive reference begins with an examination of how SiC is grown and how defects in SiC growth can affect working devices. Key issues in selective doping of SiC via ion implantation are covered with special focus on implant conditions and electrical activation of implants. SiC applications discussed include chemical sensors, motor-control components, high-temperature gas sensors, and high-temperature electronics. By cutting through the arcane data and jargon surrounding the hype on SiC, this book gives an honest assessment of today's SiC technology and shows you how SiC can be adopted in developing tomorrow's applications.

Download or read book Thermal Oxidation of Silicon Carbide SiC Experimentally Observed Facts written by Sanjeev Kumar Gupta and published by . This book was released on 2011 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon Carbide written by Moumita Mukherjee and published by BoD – Books on Demand. This book was released on 2011-10-10 with total page 562 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Carbide (SiC) and its polytypes, used primarily for grinding and high temperature ceramics, have been a part of human civilization for a long time. The inherent ability of SiC devices to operate with higher efficiency and lower environmental footprint than silicon-based devices at high temperatures and under high voltages pushes SiC on the verge of becoming the material of choice for high power electronics and optoelectronics. What is more important, SiC is emerging to become a template for graphene fabrication, and a material for the next generation of sub-32nm semiconductor devices. It is thus increasingly clear that SiC electronic systems will dominate the new energy and transport technologies of the 21st century. In 21 chapters of the book, special emphasis has been placed on the materials aspects and developments thereof. To that end, about 70% of the book addresses the theory, crystal growth, defects, surface and interface properties, characterization, and processing issues pertaining to SiC. The remaining 30% of the book covers the electronic device aspects of this material. Overall, this book will be valuable as a reference for SiC researchers for a few years to come. This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. The primary target for the book includes students, researchers, material and chemical engineers, semiconductor manufacturers and professionals who are interested in silicon carbide and its continuing progression.

Download or read book Proceedings of the Symposium on Properties of High Temperature Alloys with Emphasis on Environmental Effects written by Z. A. Foroulis and published by . This book was released on 1976 with total page 876 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Hydrothermal Reactions for Materials Science and Engineering written by S. Somiya and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 503 pages. Available in PDF, EPUB and Kindle. Book excerpt: According to the late Professor Emeritus Seitaro Tsuboi,l the word 'hydrothermal' was used as early as 1849 by a British geologist, Sir Roderick Murchison (1792-187 I), in relation to the action of heated water in bringing about change in the earth's crust. The term abounds in later geological literature, and is most frequently met in connection with the processes that take place at a stage near the closing in the course of consolidation of magma. When a cooling magma reaches that stage, the residual liquid contains a large proportion of volatile components, chiefly water, and further cooling results in the formation of minerals of special interest or ore-deposits. A great concern of Tsuboi's as a petrologist was to elucidate the details of the nature of various actions involved in these 'hydrothermal processes', of which little was known. It is remarkable that, in the last few decades, extensive high-temperature and high-pressure experiments, in which water plays an important role, have become practicable in laboratories, owing to the development of new apparatus and new methods. As a result, the knowledge essential to the elucidation of 'hydrothermal processes' has been improved, but is still far from complete.

Download or read book Advancing Silicon Carbide Electronics Technology II written by Konstantinos Zekentes and published by Materials Research Forum LLC. This book was released on 2020-03-15 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book presents an in-depth review and analysis of Silicon Carbide device processing. The main topics are: (1) Silicon Carbide Discovery, Properties and Technology, (2) Processing and Application of Dielectrics in Silicon Carbide Devices, (3) Doping by Ion Implantation, (4) Plasma Etching and (5) Fabrication of Silicon Carbide Nanostructures and Related Devices. The book is also suited as supplementary textbook for graduate courses. Keywords: Silicon Carbide, SiC, Technology, Processing, Semiconductor Devices, Material Properties, Polytypism, Thermal Oxidation, Post Oxidation Annealing, Surface Passivation, Dielectric Deposition, Field Effect Mobility, Ion Implantation, Post Implantation Annealing, Channeling, Surface Roughness, Dry Etching, Plasma Etching, Ion Etching, Sputtering, Chemical Etching, Plasma Chemistry, Micromasking, Microtrenching, Nanocrystal, Nanowire, Nanotube, Nanopillar, Nanoelectromechanical Systems (NEMS).

Download or read book High Temperature Oxidation Behavior of a Silicon Nitride silicon Carbide Composite written by Wasunthara Phoomiphakdeephan and published by . This book was released on 1993 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Springer Handbook of Electronic and Photonic Materials written by Safa Kasap and published by Springer. This book was released on 2017-10-04 with total page 1536 pages. Available in PDF, EPUB and Kindle. Book excerpt: The second, updated edition of this essential reference book provides a wealth of detail on a wide range of electronic and photonic materials, starting from fundamentals and building up to advanced topics and applications. Its extensive coverage, with clear illustrations and applications, carefully selected chapter sequencing and logical flow, makes it very different from other electronic materials handbooks. It has been written by professionals in the field and instructors who teach the subject at a university or in corporate laboratories. The Springer Handbook of Electronic and Photonic Materials, second edition, includes practical applications used as examples, details of experimental techniques, useful tables that summarize equations, and, most importantly, properties of various materials, as well as an extensive glossary. Along with significant updates to the content and the references, the second edition includes a number of new chapters such as those covering novel materials and selected applications. This handbook is a valuable resource for graduate students, researchers and practicing professionals working in the area of electronic, optoelectronic and photonic materials.

Download or read book Advancing Silicon Carbide Electronics Technology I written by Konstantinos Zekentes and published by Materials Research Forum LLC. This book was released on 2018-09-25 with total page 250 pages. Available in PDF, EPUB and Kindle. Book excerpt: The rapidly advancing Silicon Carbide technology has a great potential in high temperature and high frequency electronics. High thermal stability and outstanding chemical inertness make SiC an excellent material for high-power, low-loss semiconductor devices. The present volume presents the state of the art of SiC device fabrication and characterization. Topics covered include: SiC surface cleaning and etching techniques; electrical characterization methods and processing of ohmic contacts to silicon carbide; analysis of contact resistivity dependence on material properties; limitations and accuracy of contact resistivity measurements; ohmic contact fabrication and test structure design; overview of different metallization schemes and processing technologies; thermal stability of ohmic contacts to SiC, their protection and compatibility with device processing; Schottky contacts to SiC; Schottky barrier formation; Schottky barrier inhomogeneity in SiC materials; technology and design of 4H-SiC Schottky and Junction Barrier Schottky diodes; Si/SiC heterojunction diodes; applications of SiC Schottky diodes in power electronics and temperature/light sensors; high power SiC unipolar and bipolar switching devices; different types of SiC devices including material and technology constraints on device performance; applications in the area of metal contacts to silicon carbide; status and prospects of SiC power devices.