Download or read book A Study of Ion Implantation Damage and Annealing of Silicon Utilizing Differential Reflectometry written by Susan Weixi Feng and published by . This book was released on 1991 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Study of Ion Implantation Damage in Silicon Wafers Using Phonons written by Keith R. Strickland and published by . This book was released on 1992 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Dissertation Abstracts International written by and published by . This book was released on 2007 with total page 960 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book A Study of Ion Implantation Damage and Its Effects in Silicon written by Kwok Wai Chan and published by . This book was released on 1997 with total page 190 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Damage Formation and Annealing of Ion Implantation in Si written by M. Tamura and published by . This book was released on 1991 with total page 74 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Damage annealing and epitaxial realignment of ion implanted Si written by Antonino Cacciato and published by . This book was released on 1994 with total page 129 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Extended Abstracts written by Electrochemical Society and published by . This book was released on 1989 with total page 1066 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Investigation of Defects Formed by Ion Implantation of H2 Into Silicon written by Patrick Whiting and published by . This book was released on 2009 with total page 234 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Ion cutting achieved by the implantation of hydrogen or the co-implantation of hydrogen and helium is among the most common methods for the formation of Silicon on Insulator (SOI) structures used in the semiconductor industry. In this method, hydrogen is implanted into silicon at a high fluence and is heated in order to induce an exfoliation event. During this exfoliation event, a silicon wafer is cleaved along the depth at which the maximum damage concentration occurs, and the cleaved material bonds chemically to any underlying material being used as a handle substrate. The ion implantation process induces a variety of defect species which evolve as they are annealed at varying temperatures and times and the characteristics of these defects and the reactions which dominate their formation are critical for low temperature substrates such as LCD glass. This study observes the annealing characteristics of a variety of structural and electronic defects induced by ion implantation, including hydrogen decorated monovacancies and hydrogen decorated interstitials. The states arising from these decorated point defects were analyzed using Multiple Internal Transmission Infrared Spectroscopy (MIT-IR) and Deep Level Transient Spectroscopy (DLTS). A method for observing implant-relate defects on a MOS Capacitor using a DLTS measurement was developed. A new method for extracting the activation energy and the capture cross section of states observed with DLTS through the use of the Full Width at "Nth" Maximum was also developed. MIT-IR spectra resulting from ion implantation were analyzed using a novel method to extract the activation energy, reaction velocity and order of a solid state reaction, termed Kinetic Differential Analysis. Analysis using the methods described above allowed for the identification of five trap energy levels associated with hydrogen ion implantation which were tentatively assigned to VH2 (.15eV) VH3 (~.54eV) and IHx (.16eV and .19eV) defects. Kinetic Differential Analysis of MIT-IR spectra has identified reaction pathways associated with the 'decay' of decorated monovacancy defects. These chemical reactions have kinetic reaction orders of approximately 1.5, indicating a secondary reaction which contributes to the decay as well as some general interaction between reactants during the decay process."--Abstract.
Download or read book Defects in Ion Implanted Silicon Investigated by Transmission Electron Microscopy written by Kevin Scott Jones and published by . This book was released on 1987 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Annealing of ion implanted silicon written by B. J. Smith and published by . This book was released on 1980 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics Briefs written by and published by . This book was released on 1994 with total page 934 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Polyatomic ion implantation damage in silicon written by J. A. Davies and published by . This book was released on 1975 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Effect of Annealing at 1500 C on Migration and Release of Ion Implanted Silver in CVD Silicon Carbide written by and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The transport of silver in CVD [beta]-SiC has been studied using ion implantation. Silver ions were implanted in [beta]-SiC using the ATLAS accelerator facility at the Argonne National Laboratory. Ion beams with energies of 93 and 161 MeV were used to achieve deposition with peak concentrations at depths of approximately 9 and 13 [micro]m, respectively. As-implanted samples were then annealed at 1500 C for 210 or 480 hours. XPS, SEM, TEM, STEM, and optical methods were used to analyze the material before and after annealing. Silver concentration profiles were determined using XPS before and after annealing. STEM and SEM equipped with quantitative chemical analysis capability were used to more fully characterize the location and morphology of the silver before and after annealing. The results show that, within the uncertainty of measurement techniques, there is no silver migration, via either inter- or intragrannular paths, for the times and temperature studied. Additionally, the silver was observed to phase separate within the SiC after annealing. The irradiation damage from the implantation process resulted in a three-layer morphology in the as-implanted condition: (1) a layer of unaltered SiC, followed by (2) a layer of crystallized SiC, followed by (3) an amorphized layer which contained essentially all of the implanted silver. After annealing the layer structure changed. Layer 1 was unaltered. The grains in layer 2 recrystallized to form an epitaxial (columnar) layer. Layer 3 recrystallized to form a fine grain equiaxed layer. The results of this work do not support the long held assumption that silver release from CVD SiC, used for gas-reactor coated particle fuel, is dominated by grain boundary diffusion.
Download or read book The Effect of Annealing at 1500 C on Migration and Release of Ion Implanted Silver in CVD Silicon Carbide written by N. Lewis and published by . This book was released on 2004 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The transport of silver in CVD {beta}-SiC has been studied using ion implantation. Silver ions were implanted in {beta}-SiC using the ATLAS accelerator facility at the Argonne National Laboratory. Ion beams with energies of 93 and 161 MeV were used to achieve deposition with peak concentrations at depths of approximately 9 and 13 {micro}m, respectively. As-implanted samples were then annealed at 1500 C for 210 or 480 hours. XPS, SEM, TEM, STEM, and optical methods were used to analyze the material before and after annealing. Silver concentration profiles were determined using XPS before and after annealing. STEM and SEM equipped with quantitative chemical analysis capability were used to more fully characterize the location and morphology of the silver before and after annealing. The results show that, within the uncertainty of measurement techniques, there is no silver migration, via either inter- or intragrannular paths, for the times and temperature studied. Additionally, the silver was observed to phase separate within the SiC after annealing. The irradiation damage from the implantation process resulted in a three-layer morphology in the as-implanted condition: (1) a layer of unaltered SiC, followed by (2) a layer of crystallized SiC, followed by (3) an amorphized layer which contained essentially all of the implanted silver. After annealing the layer structure changed. Layer 1 was unaltered. The grains in layer 2 recrystallized to form an epitaxial (columnar) layer. Layer 3 recrystallized to form a fine grain equiaxed layer. The results of this work do not support the long held assumption that silver release from CVD SiC, used for gas-reactor coated particle fuel, is dominated by grain boundary diffusion.
Download or read book The Effects of Ion Implantation and Annealing of the Properties of Titianium Silicide Films on Silicon Substrates written by Leonard Michael Rubin and published by . This book was released on 1988 with total page 256 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Experimental Investigation and Modeling of the Effects of High dose Ion Implantation Damage on Boron Diffusion in Silicon written by Robert Y. S. Huang and published by . This book was released on 1994 with total page 264 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ion solid Interactions written by Walter M. Gibson and published by . This book was released on 1980 with total page 726 pages. Available in PDF, EPUB and Kindle. Book excerpt:
