Download or read book A Study of InGaP GaAs InGaP Composite Collector Double Heterojunction Bipolar Transistor and GaAs Delta doped Emitter Bipolar Junction Transistor written by Kim Luong Lew and published by . This book was released on 2004 with total page 130 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Study and Realization of InGaP GaAs collector Up Double Heterojunction Bipolar Transistors for High Performance RF Applications written by Achim Henkel and published by . This book was released on 1998 with total page 137 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Fabrication and Modeling of InGaP GaAs Heterojunction Bipolar Transistor written by Sung-Jin Ho and published by . This book was released on 2007 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Characteristics of InGaP GaAs Single Heterojunction Bipolar Transistor with Zero Potential spike by doped Sheet written by and published by . This book was released on 1906 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: We report the fabrication and characterization of the InGaP/GaAs single hetƯerojunction bipolar transistor (SHBT). The cross sectional structure of the studied device is shown in Fig.l. The SHBT with a delta-doped sheet located at the E-B heterointerface (delta-SHBT) exhibits a common-emitter current gain as high as 410 and an extremely low offset voltage of only 55 mV. Figure 2(a) and (b) illustrate the I-V characteristics and the expanded view near the near of the same device. The higher current gain of delta-SHBT can be attributed to the increase of the hole barrier resulting from the delta-doped sheet and to the reduction of charge storage because of the existence of thin spacer (50-A). The low offset voltage is due to the elimination of the potential spike of E-B junction. The calculated conduction band-edge diaƯgrams near the E-B junction of delta-SHBT, conventional SHBT and HEBT at various biased conditions are plotted in Fig. 3. At equilibrium, no potential spike exists for all the three structures. As Vbe= + 1.0 V forward biased, a potential spike about 60 meV existed in an SHBT while no potential spike existed in both delta-SHBT and HEBT. Also notice that the width of neutral region in narrow energy-gap emitter for an HEBT is also increased with biased voltage. It is evident that the potential spike do be eliminated by utilizing delta-doped sheet. On the other hand, calculated increase of the E-B capacitance for our delta-SHBT is very small due to the thin enough delta-doped sheet.

Download or read book Investigation of GaInP GaAs Double Heterojunction Bipolar Transistors for Microwave Power Amplifier Applications written by Pin-Fan Chen and published by . This book was released on 2001 with total page 330 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Novel Applications of GaInP to GaAs Based Heterojunction Bipolar Transistors HBTs written by Shyh-Liang Fu and published by . This book was released on 1996 with total page 272 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book GaAs based Epitaxial Structures for Heterojunction Bipolar Transistors with Increased Efficiency written by Rebecca Jane Welty and published by . This book was released on 2002 with total page 332 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2002 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Fabrication of GaAs Devices written by Albert G. Baca and published by IET. This book was released on 2005-09 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides fundamental and practical information on all aspects of GaAs processing and gives pragmatic advice on cleaning and passivation, wet and dry etching and photolithography. Other topics covered include device performance for HBTs (Heterojunction Bipolar Transistors) and FETs (Field Effect Transistors), how these relate to processing choices, and special processing issues such as wet oxidation, which are especially important in optoelectronic devices. This book is suitable for both new and practising engineers.

Download or read book Reliability Study of InGaP GaAs Heterojunction Bipolar Transistor MMIC Technology by Characterization Modeling and Simulation written by Xiang Liu and published by . This book was released on 2011 with total page 88 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recent years have shown real advances of microwave monolithic integrated circuits (MMICs) for millimeter-wave frequency systems, such as wireless communication, advanced imaging, remote sensing and automotive radar systems, as MMICs can provide the size, weight and performance required for these systems. Traditionally, GaAs pseudomorphic high electron mobility transistor (pHEMT) or InP based MMIC technology has dominated in millimeter-wave frequency applications because of their high f[subscript T] and f[subscript max] as well as their superior noise performance. But these technologies are very expensive. Thus, for low cost and high performance applications, InGaP/GaAs heterojunction bipolar transistors (HBTs) are quickly becoming the preferred technology to be used due to their inherently excellent characteristics. These features, together with the need for only one power supply to bias the device, make InGaP/GaAs HBTs very attractive for the design of high performance fully integrated MMICs. With the smaller dimensions for improving speed and functionality of InGaP/GaAs HBTs, which dissipate large amount of power and result in heat flux accumulated in the device junction, technology reliability issues are the first concern for the commercialization. As the thermally triggered instabilities often seen in InGaP/GaAs HBTs, a carefully derived technique to define the stress conditions of accelerated life test has been employed in our study to acquire post-stress device characteristics for the projection of long-term device performance degradation pattern. To identify the possible origins of the post-stress device behaviors observed experimentally, a two dimensional (2-D) TCAD numerical device simulation has been carried out. Using this approach, it is suggested that the acceptor-type trapping states located in the emitter bulk are responsible for the commonly seen post-stress base current instability over the moderate base-emitter voltage region. HBT-based MMIC performance is very sensitive to the variation of core device characteristics and the reliability issues put the limit on its radio frequency (RF) behaviors. While many researchers have reported the observed stress-induced degradations of GaAs HBT characteristics, there has been little published data on the full understanding of stress impact on the GaAs HBT-based MMICs. If care is not taken to understand this issue, stress-induced degradation paths can lead to built-in circuit failure during regular operations. However, detection of this failure may be difficult due to the circuit complexity and lead to erroneous data or output conditions. Thus, a practical and analytical methodology has been developed to predict the stress impacts on HBT-based MMICs. It provides a quick way and guidance for the RF design engineer to evaluate the circuit performance with reliability considerations. Using the present existing EDA tools (Cadance SpectreRF and Agilent ADS) with the extracted pre- and post-stress transistor models, the electrothermal stress effects on InGaP/GaAs HBT-based RF building blocks including power amplifier (PA), low-noise amplifier (LNA) and oscillator have been systematically evaluated. This provides a potential way for the RF/microwave industry to save tens of millions of dollars annually in testing costs. The world now stands at the threshold of the age of advanced GaAs HBT MMIC technology and researchers have been exploring here for years. The reliability of GaAs HBT technology is no longer the post-design evaluation, but the pre-design consideration. The successful and fruitful results of this dissertation provide methods and guidance for the RF designers to achieve more reliable RF circuits with advanced GaAs HBT technology in the future.

Download or read book Science Abstracts written by and published by . This book was released on 1995 with total page 1990 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Study and Realization of InGaP GaAs Collector up Double Heterojuntion Bipolar Transistors for High Performance RF Applications written by Achim Henkel and published by . This book was released on 1998 with total page 137 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Analysis of Bias dependent Collector Delay in InGaP GaAs Heterojunction Bipolar Transistors written by Michael Leonard Hattendorf and published by . This book was released on 2000 with total page 118 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Device Design and Fabrication of InGaP GaAsSb GaAs DHBTs written by and published by . This book was released on 2004 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: (Uncorrected OCR) Abstract of thesis entitled Device Design and Fabrication of InGaP/GaAsSb/GaAs DHBTs submitted by Cheung Chi Chuen, Cecil for the degree of Master of Philosophy at the University of Hong Kong in December 2003 A study of the InGaP/GaAsSb/GaAs double heterojunction bipolar transistor (DHBT) is presented. A novel device structure is designed, fully strained pseudomorphic GaAsSb with different Sb (Antimony) compositions is used as the base layer and an InGaP layer is used as the emitter. Thus both eliminates the misfit dislocations and increases the valence band discontinuity at the InGaP/GaAsSb interface. Various aspects of device performance, including the IV characteristics, current gain, ideality factor, current transport mechanism, high frequency performances and the turn on voltage of the InGaP/GaAsSb/GaAs DHBT are investigated. The results indicate that GaAsSb is a promising base material for reducing the turn-on voltage of GaAs HBTs. The thesis is organized into five chapters. Chapter One, an introductory chapter, defines the aim of the study. Chapter Two reviews the relevant literature and discusses the basic principle of the HBT device physics and the DC (direct current) and RF (radio-frequency) characteristics of the HBT devices. Chapter Three describes the device design and fabrication process in detail, and is illustrated with captioned diagrams. Chapter Four discusses and analyzes the experimental results, and is illustrated with appropriate graphs and tables. Chapter Five discusses the significance of the research in summary form, and suggests some practical ideas for future development.

Download or read book Implementation of a Test System for an InGaP GaAs Heterojunction Bipolar Transistor Reliability Study written by Michael Scott Griswold and published by . This book was released on 1999 with total page 80 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book High Uniformity 6 InGaP GaAs Heterojunction Bipolar transistors written by and published by . This book was released on 2000 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The growth of highly uniform, state-of-the-art InGaP/GaAs heterojunction bipolar transistors is demonstrated in a multi-wafer 6-inch configuration (AIX 2600). The uniformity of thickness, doping, composition, interface properties and minority carrier lifetime are assessed by electrical and structural characterization measurements, and shown to vary by less than "3% across the wafer. The dc current gain versus base sheet resistance on a high gain structure, has a non-linear dependence on base sheet resistance, typical of high performance InGaP/GaAs HBTs.

Download or read book Semiconductor Research Trends written by Kenneth G. Sachs and published by . This book was released on 2007 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book includes within its scope studies of the structural, electrical, optical and acoustical properties of bulk, low-dimensional and amorphous semiconductors; computational semiconductor physics; interface properties, including the physics and chemistry of heterojunctions, metal-semiconductor and insulator-semiconductor junctions; all multi-layered structures involving semiconductor components. Dopant incorporation. Growth and preparation of materials, including both epitaxial (e.g. molecular beam and chemical vapour methods) and bulk techniques; in situ monitoring of epitaxial growth processes, also included are appropriate aspects of surface science such as the influence of growth kinetics and chemical processing on layer and device properties. The physics of semiconductor electronic and optoelectronic devices are examined , including theoretical modelling and experimental demonstration; all aspects of the technology of semiconductor device and circuit fabrication. Relevant areas of 'molecular electronics' and semiconductor structures incorporating Langmuir- Blodgett films; resists, lithography and metallisation where they are concerned with the definition of small geometry structure. The structural, electrical and optical characterisation of materials and device structures are also included. The scope encompasses materials and device reliability: reliability evaluation of technologies; failure analysis and advanced analysis techniques such as SEM, E-beam, optical emission microscopy, acoustic microscopy techniques; liquid crystal techniques; noise measurement, reliability prediction and simulation; reliability indicators; failure mechanisms, including charge migration, trapping, oxide breakdown, hot carrier effects, electro-migration, stress migration; package- related failure mechanisms; effects of operational and environmental stresses on reliability.