Download or read book A Study of Implantation and Irradiation Induced Deep Level Defects in 6h Sic written by Min Gong and published by Open Dissertation Press. This book was released on 2017-01-27 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation, "A Study of Implantation and Irradiation Induced Deep-level Defects in 6H-SiC" by Min, Gong, 龔敏, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. DOI: 10.5353/th_b3123849 Subjects: Ion implantation Electron beams Irradiation Silicon carbide

Download or read book A Study of Implantation and Irradiation Induced Deep level Defects in 6H SiC written by Min Gong and published by . This book was released on 1998 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Defects in Microelectronic Materials and Devices written by Daniel M. Fleetwood and published by CRC Press. This book was released on 2008-11-19 with total page 772 pages. Available in PDF, EPUB and Kindle. Book excerpt: Uncover the Defects that Compromise Performance and ReliabilityAs microelectronics features and devices become smaller and more complex, it is critical that engineers and technologists completely understand how components can be damaged during the increasingly complicated fabrication processes required to produce them.A comprehensive survey of defe

Download or read book Silicon Carbide 2004 Materials Processing and Devices Volume 815 written by Michael Dudley and published by Cambridge University Press. This book was released on 2004-08-24 with total page 344 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon carbide (SiC) is a wide-bandgap semiconductor that can operate at temperatures well above 300ºC, where silicon cannot perform. In addition, due to a high thermal conductivity equal to copper at room temperature, SiC is an ideal candidate for operation in harsh environments and at high-power levels. Rapid advances in SiC materials and devices have recently resulted in implementation of SiC-based electronic systems, and the impact of these devices is expected to significantly increase in the next several years. This book documents the most recent results on growth of bulk and epitaxial layers, physical and structural properties, process technology, and device development obtained since the 10th International Conference on Silicon Carbide and Related Materials 2003 (ICSCRM2003) held in Lyon, France. Extended defects in silicon carbide are highlighted. The nature of defects induced by forward biasing of bipolar devices, as well as methods to suppress the degradation, are addressed.

Download or read book Defects in Ion Implanted Silicon Carbide written by and published by . This book was released on 2004 with total page 5 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects that introduce electrically active deep levels in ion-implanted Silicon Carbide (SiC) were studied by performing capacitance Deep- Level Transient- Spectroscopy (DLTS) and transconductance frequency dispersion measurements on fully implanted MESFETs in bulk semi-insulating 4-H SiC, MISFETs in 6-H SiC and double implanted p-n and n-p junction diodes in 4-H SiC. The junction diodes made with aluminum and phosphoms implantations exhibited higher reverse leakage current compared to those made by nitrogen and boron implantations. In all samples implanted with nitrogen a defect complex involving nitrogen and a point defect (introduced by the ion-implantation process) is observed with a trap level introduced at 0.51 eV above the valence band. Phosphoms implant-native defect related peaks are observed at 0.6 and 0.7 eV above the valence band. In all boron implanted samples, a prominent electrically active boron related D-center defect is seen at 0.62 eV above the valence band. In aluminum implanted samples an intrinsic vacancy related defect is seen at 0.78 eV above the valence band. Surface state related defects were observed in the N-implanted channel region at energies 0.18 eV, 0.3 eV and 0.4 eV. Several defects were observed in the gate insulator and insulator/channel interface.

Download or read book Diffusion and Defect Data written by and published by . This book was released on 2003 with total page 836 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2540 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Properties of Silicon Carbide written by Gary Lynn Harris and published by IET. This book was released on 1995 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: This well structured and fully indexed book helps to understand and fully characterize the SiC system.

Download or read book Wide Bandgap Semiconductors for Power Electronics written by Peter Wellmann and published by John Wiley & Sons. This book was released on 2022-01-10 with total page 743 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wide Bandgap Semiconductors for Power Electronic A guide to the field of wide bandgap semiconductor technology Wide Bandgap Semiconductors for Power Electronics is a comprehensive and authoritative guide to wide bandgap materials silicon carbide, gallium nitride, diamond and gallium(III) oxide. With contributions from an international panel of experts, the book offers detailed coverage of the growth of these materials, their characterization, and how they are used in a variety of power electronics devices such as transistors and diodes and in the areas of quantum information and hybrid electric vehicles. The book is filled with the most recent developments in the burgeoning field of wide bandgap semiconductor technology and includes information from cutting-edge semiconductor companies as well as material from leading universities and research institutions. By taking both scholarly and industrial perspectives, the book is designed to be a useful resource for scientists, academics, and corporate researchers and developers. This important book: Presents a review of wide bandgap materials and recent developments Links the high potential of wide bandgap semiconductors with the technological implementation capabilities Offers a unique combination of academic and industrial perspectives Meets the demand for a resource that addresses wide bandgap materials in a comprehensive manner Written for materials scientists, semiconductor physicists, electrical engineers, Wide Bandgap Semiconductors for Power Electronics provides a state of the art guide to the technology and application of SiC and related wide bandgap materials.

Download or read book A Study of Ion Implantation and Deep Level Transient Spectroscopy in Beta Silicon Carbide written by Lawrence Clayton Greer and published by . This book was released on 1989 with total page 414 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon Carbide and Related Materials 1999 written by Calvin H. Carter and published by . This book was released on 2000 with total page 908 pages. Available in PDF, EPUB and Kindle. Book excerpt: This two-volume set contains written versions of papers presented at the International Conference on Silicon Carbide and Related Materials - 1999 (ICSCRM'99) held October 10-15, 1999, at Research Triangle Park, North Carolina. They contain 401 papers, 19 of which were invited.

Download or read book Sic Materials And Devices Volume 2 written by Michael S Shur and published by World Scientific. This book was released on 2007-01-19 with total page 143 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon carbide is known to have been investigated since 1907 when Captain H J Round demonstrated yellow and blue emission by applying bias between a metal needle and an SiC crystal. The potential of using SiC in semiconductor electronics was already recognized half a century ago. Despite its well-known properties, it has taken a few decades to overcome the exceptional technological difficulties of getting silicon carbide material to reach device quality and travel the road from basic research to commercialization.This second of two volumes reviews four important additional areas: the growth of SiC substrates; the deep defects in different SiC polytypes, which after many years of research still define the properties of bulk SiC and the performance and reliability of SiC devices; recent work on SiC JFETs; and the complex and controversial issues important for bipolar devices.Recognized leaders in the field, the contributors to this volume provide up-to-date reviews of further state-of-the-art areas in SiC technology and materials and device research.

Download or read book Defects and Diffusion in Ceramics written by and published by . This book was released on 2003 with total page 476 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Defects in Semiconductors 16 Proceedings of the International Conference 16th Held in Bethlehem Pennsylvania on 22 26 July 1991 written by and published by . This book was released on 1992 with total page 525 pages. Available in PDF, EPUB and Kindle. Book excerpt: Partial contents include: (1) Atomic defect configuration identified by nuclear techniques; (2) Combination of deep level transient spectroscopy; (3) Microscopy of Frenkel pairs in semiconductors by nuclear techniques; (4) Muon stopping sites in semiconductors from decay positron channeling; (5) Polarized spectroscopy of complex luminescence centers; (6) A re-evaluation of electric field enhanced emission measurements for use in type and charge state determination; (7) X ray spectroscopy following neutron irradiation of semi- conductor silicon; (8) Transition metals in silicon carbide (SiC) : vanadium and titanium; (9) Photoluminescence excitation spectroscopy of cubic SiC grown by chemical vapor deposition on Si substrates; (10) Luminescence and absorption of vanadium in 6H SiC; (11) Impurity defect reactions in ion implanted diamond; (12) Electron trapping defects in MBE-grown relaxed n-In0.05- Ga0.95 As on gallium arsenide; (13) Scanning tunneling microscopy studies of semiconductor surface defects; (14) Photoluminescence characterisation of the silicon surface exposed to plasma treatment; (15) An analysis of point defect fluxes during silicon dioxide precipitation in silicon; (16) Electrical properties of oxidation-induced stacking faults in n-type silicon; (17) Morphology change of oxygen precipitates in CZ-Si wafers during two-step heat-treatment; (18) Ion implantation induced sheet stress due to defects in thin (100) silicon films; and (19) Hydrogen induced defects and defect passivation in silicon solar cells.

Download or read book Radiation Effects in Silicon Carbide written by A.A. Lebedev and published by Materials Research Forum LLC. This book was released on 2017 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book reviews the most interesting research concerning the radiation defects formed in 6H-, 4H-, and 3C-SiC under irradiation with electrons, neutrons, and some kinds of ions. The electrical parameters that make SiC a promising material for applications in modern electronics are discussed in detail. Specific features of the crystal structure of SiC are considered. It is shown that, when wide-bandgap semiconductors are studied, it is necessary to take into account the temperature dependence of the carrier removal rate, which is a standard parameter for determining the radiation hardness of semiconductors. The carrier removal rate values obtained by irradiation of various SiC polytypes with n- and p-type conductivity are analyzed in relation to the type and energy of the irradiating particles. The influence exerted by the energy of charged particles on how radiation defects are formed and conductivity is compensated in semiconductors under irradiation is analyzed. Furthermore, the possibility to produce controlled transformation of silicon carbide polytype is considered. The involvement of radiation defects in radiative and nonradiative recombination processes in SiC is analyzed. Data are also presented regarding the degradation of particular SiC electronic devices under the influence of radiation and a conclusion is made regarding the radiation resistance of SiC. Lastly, the radiation hardness of devices based on silicon and silicon carbide are compared.

Download or read book International Aerospace Abstracts written by and published by . This book was released on 1998 with total page 980 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electric Refractory Materials written by Yukinobu Kumashiro and published by CRC Press. This book was released on 2000-08-24 with total page 778 pages. Available in PDF, EPUB and Kindle. Book excerpt: An exploration of electric refractory materials, this book covers developments of blue light-emitting diodes using GaN-based nitrides for laser and high-temperature and -frequency devices. Electric Refractory Materials introduces growth and evaluation standards of films and bulk crystals, with consideration of band structure, surface electronic structure, and lattice vibrations. It also covers heat capacity and thermal conductivity, irradiation properties, and selective surfaces. Focusing on diamond material, the book examines its synthesis and characterization as well as its electrical, optical, and conductive properties. The book also discusses the use of silicon carbide, boron compounds, and other material used in electronic and light-emitting devices.