Download or read book A Study of Erbium Doped III V Semiconductors for Optoelectronic Applications written by Sanjay Sethi and published by . This book was released on 1995 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Photoluminescence Properties of Erbium Doped III V Semiconductors written by Thomas D. Culp and published by . This book was released on 1998 with total page 556 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Rare Earth Doped Semiconductors II Volume 422 written by S. Coffa and published by . This book was released on 1996 with total page 392 pages. Available in PDF, EPUB and Kindle. Book excerpt: Rare-earth doped semiconductors hold great potential for a variety of optoelectronic applications, including lasers, LEDs and optical amplifiers. In fact, the field has grown rapidly over the past several years, with a clear switch in direction. The first book by this name was devoted to rare-earth doped II-VI and III-V semiconductors; more than half of the papers in this new volume are devoted to rare-earth doped silicon. This indicates that rare-earth doping of silicon is now seriously considered as a means to achieve silicon-based optoelectronic devices. In addition, new reports on rare-earth doped III-nitrides are also presented. Researchers from 14 countries come together in the volume to discuss current trends, highlight new developments and identify potential electronic and optoelectronic applications. Topics include: incorporation methods and properties; structural, electrical and optical properties; excitation mechanisms and electroluminescence and integration.
Download or read book Proceedings of the Symposium on Light Emitting Devices for Optoelectronic Applications and the Twenty Eighth State of the Art Program on Compound Semiconductors written by H. Q. Hou and published by The Electrochemical Society. This book was released on 1998 with total page 664 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Rare Earth Doped III Nitrides for Optoelectronic and Spintronic Applications written by Kevin Peter O'Donnell and published by Springer Science & Business Media. This book was released on 2010-06-28 with total page 366 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book summarises recent progress in the science and technology of rare-earth doped nitrides, providing a snapshot of the field at a critical point in its development. It is the first book on rare-earth doped III-Nitrides and semiconductors.
Download or read book Study of Erbium Doped Semiconductor Devices for Optoelectronics written by and published by . This book was released on 1994 with total page 15 pages. Available in PDF, EPUB and Kindle. Book excerpt: This project involves the physics of luminescence of erbium (Er) in silicon (Si), with the goal of an electrically pumped Si laser operating at 1550 nm. The AASERT grant funds one graduate student, Mr. Bruce Willner. A liquid nitrogen cooled luminescence measurement system, capable of measuring waveguides, is described. Spectral measurements performed using this system are presented for Er doped glass, as well as two laser diodes at approx. 1490nm. Various Si samples were studied. One set were implanted with Er ions by Dr. F. Namavar at Spire Corp. while the other set were grown epitaxially with in Situ Er doping using CVD by Prof. Varhue at the University of Vermont. The particular sample preparation conditions are described. Photoluminescence of these samples was studied using the l490nm, 40mW laser diodes, and an argon laser at 514 nm. No PL signal has been detected from our Er-doped Si samples, although we obtained a spectrum from Er-doped glass. Cathodoluminescence using a 15kV, 20 micro A current beam, at 10K did not reveal any Er luminescence either. Future plans are described. jg p.2.
Download or read book Compound Semiconductors 1995 Proceedings of the Twenty Second INT Symposium on Compound Semiconductors held in Cheju Island Korea 28 August 2 September 1995 written by Woo and published by CRC Press. This book was released on 1996-04-25 with total page 1352 pages. Available in PDF, EPUB and Kindle. Book excerpt: Compound Semiconductors 1995 focuses on emerging applications for GaAs and other compound semiconductors, such as InP, GaN, GaSb, ZnSe, and SiC, in the electronics and optoelectronics industries. The book presents the research and development work in all aspects of compound semiconductors. It reflects the maturity of GaAs as a semiconductor material and the rapidly increasing pool of research information on many other compound semiconductors. Covering the full breadth of the subject, from growth through processing to devices and integrated circuits, this volume provides researchers in materials science, device physics, condensed matter physics, and electrical and electronic engineering with a comprehensive overview of developments in this well-established research area.
Download or read book Compound Semiconductors 1995 Proceedings of the Twenty Second INT Symposium on Compound Semiconductors held in Cheju Island Korea 28 August 2 September 1995 written by Institute of Physics Conference and published by CRC Press. This book was released on 2020-10-28 with total page 1352 pages. Available in PDF, EPUB and Kindle. Book excerpt: Compound Semiconductors 1995 focuses on emerging applications for GaAs and other compound semiconductors, such as InP, GaN, GaSb, ZnSe, and SiC, in the electronics and optoelectronics industries. The book presents the research and development work in all aspects of compound semiconductors. It reflects the maturity of GaAs as a semiconductor material and the rapidly increasing pool of research information on many other compound semiconductors. Covering the full breadth of the subject, from growth through processing to devices and integrated circuits, this volume provides researchers in materials science, device physics, condensed matter physics, and electrical and electronic engineering with a comprehensive overview of developments in this well-established research area.
Download or read book Proceedings of the Second Symposium on III V Nitride Materials and Processes written by C. R. Abernathy and published by The Electrochemical Society. This book was released on 1998 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book InP and Related Compounds written by M O Manasreh and published by CRC Press. This book was released on 2000-08-08 with total page 870 pages. Available in PDF, EPUB and Kindle. Book excerpt: InP is a key semiconductor for the production of optoelectronic and photonic devices. Its related compounds, such as InGaAsP alloy, have been realized as very important materials for communication in the 1.3 and 1.55 micron spectral regions. Furthermore, the applications on InP and related compounds have extended to other areas that include laser diodes, light emitting diodes, photodetectors, waveguides, photocathodes, solar cells, and many other applications. The topics presented in this book have been chosen to achieve a balance between the properties of bulk materials, doping, characterization, applications, and devices. This unique volume, featuring chapters written by experts in the field, provides a good starting point for those who are new to the subject and contains detailed results and in depth discussions for those who are experts in the field.
Download or read book Semiconductor Materials for Optoelectronics and LTMBE Materials written by J.P. Hirtz and published by Elsevier. This book was released on 2016-07-29 with total page 365 pages. Available in PDF, EPUB and Kindle. Book excerpt: These three day symposia were designed to provide a link between specialists from university or industry who work in different fields of semiconductor optoelectronics. Symposium A dealt with topics including: epitaxial growth of III-V, II-VI, IV-VI, Si-based structures; selective-area, localized and non-planar epitaxy, shadow-mask epitaxy; bulk and new optoelectronic materials; polymers for optoelectronics. Symposium B dealt with III-V epitaxial layers grown by low temperature molecular beam epitaxy, a subject which has undergone rapid development in the last three years.
Download or read book III Nitride Semiconductor Optoelectronics written by and published by Academic Press. This book was released on 2017-01-05 with total page 490 pages. Available in PDF, EPUB and Kindle. Book excerpt: III-Nitride Semiconductor Optoelectronics covers the latest breakthrough research and exciting developments in the field of III-nitride compound semiconductors. It includes important topics on the fundamentals of materials growth, characterization, and optoelectronic device applications of III-nitrides. Bulk, quantum well, quantum dot, and nanowire heterostructures are all thoroughly explored. Contains the latest breakthrough research in III-nitride optoelectronics Provides a comprehensive presentation that covers the fundamentals of materials growth and characterization and the design and performance characterization of state-of-the-art optoelectronic devices Presents an in-depth discussion on III-nitride bulk, quantum well, quantum dot, and nanowire technologies
Download or read book Proceedings of the 16th International Conference on Defects in Semiconductors written by Gordon Davies and published by . This book was released on 1992 with total page 572 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Materials for Optoelectronic Devices OEICs and Photonics written by H. Schlötterer and published by Elsevier. This book was released on 1991-10-08 with total page 542 pages. Available in PDF, EPUB and Kindle. Book excerpt: The aim of the contributions in this volume is to give a current overview on the basic properties and applications of semiconductor and nonlinear optical materials for optoelectronics and integrated optics. They provide a cross-linkage between different materials (III-V, II-VI, Si-Ge, glasses, etc.), various sample dimensions (from bulk crystals to quantum dots), and a range of techniques for growth (LPE to MOMBE) and for processing (from surface passivation to ion beams). Major growth techniques and materials are discussed, including the sophisticated technologies required to exploit the exciting properties of low dimensional semiconductors. These proceedings will prove an invaluable guide to the current state of optoelectronic and nonlinear optical materials development, as well as indicating trends and also future markets for optoelectronic devices.
Download or read book Optoelectronic Workshops 3 Opto Electronics in III V Semiconductors Materials and Devices written by and published by . This book was released on 1988 with total page 72 pages. Available in PDF, EPUB and Kindle. Book excerpt: This workshop on 'Opto-Electronics in III-V Semiconductors: Materials and Devices' represents the third of a series of intensive academic/government interactions in the field of advanced electro-optics, as part of the Army sponsored University Research Initiative. Some of the topics discussed in the workshop include: Focal plane arrays of 10 micrometer detectors; Monolithic integration--sources; High power laser diode arrays for YAG pumping; Green GaP lasers; Doping superlattices for optical modulation; Resonant tunneling (mainly theory); piezoreflectance studies of III-V heterostructures, and lightwave research for microwave radar applications. Keywords: Crystal growth, Quantum wells, Electronic equipment, Fabrication, Epitaxial growth, Etching, Optical communications, Night vision devices.
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1994 with total page 652 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Applications of Silicon Germanium Heterostructure Devices written by C.K Maiti and published by CRC Press. This book was released on 2001-07-20 with total page 402 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first book to deal with the design and optimization of transistors made from strained layers, Applications of Silicon-Germanium Heterostructure Devices combines three distinct topics-technology, device design and simulation, and applications-in a comprehensive way. Important aspects of the book include key technology issues for the growth of st
