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Book A Study of Amorphous Indium Tin Zinc Oxide Based All Transparent Thin Film Transistors by Ultrasonic Spray Pyrolysis Deposition

Download or read book A Study of Amorphous Indium Tin Zinc Oxide Based All Transparent Thin Film Transistors by Ultrasonic Spray Pyrolysis Deposition written by 紀柏丞 and published by . This book was released on 2019 with total page 74 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Oxide Thin Film Transistors

Download or read book Oxide Thin Film Transistors written by K. J. Saji and published by Nova Science Publishers. This book was released on 2017 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Transparent flexible electronics is an emerging technology which makes use of wide band gap semiconductors that can be processed at low temperatures on glass or plastic substrates. Electronic systems that cover large area and curved surfaces together with transparency bring the possibility of numerous applications that are outside the scope of rigid wafer based electronics. Flexible electronics, electronic textiles, a wearable wellness system, and sensory skin are some of the applications of flexible electronics. The key factor in the realization of transparent electronics is the development of high performance fully transparent thin film transistors. Thin film transistors (TFTs) based on transparent conducting amorphous oxide semiconductors (TAOS) such as InGaZnO (IGZO), zinc tin oxide (ZTO), zinc indium tin oxide (ZITO), etc. provide additional functionalities like transparency, high field effect mobility and potential for room temperature processing. The performance of these TAOS based TFTs are superior to their silicon (a-Si:H TFTs) and organic TFTs. Though there are monographs and books on a-Si:H TFTs and organic TFTs, a book on TAOS based TFTs is rare. This book introduces the graduate students and beginners to the field of amorphous semiconductors. The mass production of this kind of TFTs on large area substrates involves the complications associated with controlling the composition of oxide compound semiconductor thin film material. Pulsed laser deposition allows for the growth of an oxide semiconductor in a very high oxygen rich environment while co-sputtering is an effective technique for the growth of a multicomponent film and to control the film chemical composition in a systematic and easy way. These manufacturing aspects will be of interest to those working in the industry. The review on the n channel, p channel TFTs, and the detailed description on the extraction of various TFT parameters like the threshold voltage, field effect mobility, sub threshold slope and on-off ratio etc. will be ready reckoner to those working in the field of transparent electronics.

Book Study on Transparent Amorphous Indium Oxide Thin Film Transistors Technology

Download or read book Study on Transparent Amorphous Indium Oxide Thin Film Transistors Technology written by and published by . This book was released on 2014 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Amorphous Ingazno Thin Film Transistor with La Based High K Gate Dielectric

Download or read book Amorphous Ingazno Thin Film Transistor with La Based High K Gate Dielectric written by Lingxuan Qian and published by Open Dissertation Press. This book was released on 2017-01-27 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation, "Amorphous InGaZnO Thin-film Transistor With La-based High-k Gate Dielectric" by Lingxuan, Qian, 钱凌轩, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. Abstract: In general, La-based high-k gate dielectric owns superior properties to offer transistor excellent characteristics. Thus, amorphous InGaZnO thin-film transistor with La-based high-k gate dielectric has been investigated in this thesis. Different approaches have been adopted to improve the device performance. First of all, the influence of gate-dielectric annealing in oxygen for different times on the device characteristics of the amorphous InGaZnO thin-film transistor with HfLaO gate dielectric has been investigated. It is demonstrated that this annealing treatment can effectively suppress the negative oxide charges. Moreover, it is discovered that this annealing treatment can suppress the acceptor-like border and interface traps. Accordingly, a high saturation carrier mobility of 35.2 〖cm〗 DEGREES2/V∙s is achieved for the 30'-annealed device. Then, the effects of dielectric-annealing gas (O2, N2 and NH3) for a fixed annealing time of 10 min on the device characteristics are studied, and improvements by the dielectric annealing are observed for each gas. Among the samples, the N2-annealed sample has a high saturation carrier mobility of 35.1 〖cm〗 DEGREES2/V∙s, the lowest subthreshold swing of 0.206 V/dec and a negligible hysteresis. On the contrary, the O2-annealed sample shows poorer performance due to a decrease of electron concentration in InGaZnO. Furthermore, the NH3-annealed sample displays the lowest threshold voltage (1.95 V) due to increased gate-oxide capacitance and generated positive oxide charges. Next, the effects of fluorine incorporation in amorphous InGaZnO by ion implant on the characteristics of InGaZnO thin-film transistor have been investigated. The electrical characteristics can be improved by this treatment due to increase of carrier concentration and passivation of defects in the InGaZnO film. Consequently, the saturation carrier mobility can be increased to 34.0 〖cm〗 DEGREES2/V∙s, and the output current can be nearly doubled. However, device degradation is observed for very high fluorine dose above 1.01015 /〖cm〗 DEGREES2. Then, another method for fluorine incorporation has been studied by treating the amorphous InGaZnO film in a CHF3/O2 plasma. The saturation carrier mobility can be improved to as high as 39.8 〖cm〗 DEGREES2/V∙s. Then, a new high-k material is proposed by investigating the effects of Ta incorporation in the La2O3 gate dielectric of amorphous InGaZnO thin-film transistor. Since the Ta incorporation is found to effectively enhance the moisture resistance of the La2O3 film, both the dielectric roughness and trap density at/near the InGaZnO/dielectric interface can be reduced, resulting in a significant improvement in the electrical characteristics of the device. Nevertheless, excessive incorporation of Ta can degrade the device characteristics due to newly-generated Ta-related traps. Finally, the proposed TaLaO is compared with Ta2O5 as the gate dielectric of amorphous InGaZnO thin-film transistor. It is found that the electrical characteristics of the device can be effectively improved by the incorporation of La in the Ta2O5 gate dielectric, which is ascribed to the fact that La incorporation can enlarge the band gap of Ta oxide and its conduction-band offset with InGaZnO, and also reduce the trap densities in the Ta2O5 gate dielectric and at the InGaZnO/gate-dielectric interface. DOI: 10.5353/th_b5317022 Subjects:

Book Amorphous InGaZnO Thin film Transistor with Optimized High k Gate Dielectric

Download or read book Amorphous InGaZnO Thin film Transistor with Optimized High k Gate Dielectric written by Jiaqi Song (Researcher on electrical and electronic engineering) and published by . This book was released on 2017 with total page 109 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Metal and Metal Oxides for Energy and Electronics

Download or read book Metal and Metal Oxides for Energy and Electronics written by Saravanan Rajendran and published by Springer Nature. This book was released on 2020-10-05 with total page 413 pages. Available in PDF, EPUB and Kindle. Book excerpt: Energy is a key world issue in the context of climate change and increasing population, 'calling for alternative fuels, better energy storage, and energy-saving devices. This books reviews the principles and applications of metals and metal oxides for energy, with focus on batteries, electrodes, nanomaterials, electronics, supercapacitors, biofuels and sensors.

Book Handbook of Transparent Conductors

Download or read book Handbook of Transparent Conductors written by David S. Ginley and published by Springer Science & Business Media. This book was released on 2010-09-11 with total page 537 pages. Available in PDF, EPUB and Kindle. Book excerpt: Transparent conducting materials are key elements in a wide variety of current technologies including flat panel displays, photovoltaics, organic, low-e windows and electrochromics. The needs for new and improved materials is pressing, because the existing materials do not have the performance levels to meet the ever- increasing demand, and because some of the current materials used may not be viable in the future. In addition, the field of transparent conductors has gone through dramatic changes in the last 5-7 years with new materials being identified, new applications and new people in the field. “Handbook of Transparent Conductors” presents transparent conductors in a historical perspective, provides current applications as well as insights into the future of the devices. It is a comprehensive reference, and represents the most current resource on the subject.