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Book A Study of Amorphous Indium Tin Zinc Oxide Based All Transparent Thin Film Transistors by Ultrasonic Spray Pyrolysis Deposition

Download or read book A Study of Amorphous Indium Tin Zinc Oxide Based All Transparent Thin Film Transistors by Ultrasonic Spray Pyrolysis Deposition written by 紀柏丞 and published by . This book was released on 2019 with total page 74 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Oxide Thin Film Transistors

Download or read book Oxide Thin Film Transistors written by K. J. Saji and published by Nova Science Publishers. This book was released on 2017 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Transparent flexible electronics is an emerging technology which makes use of wide band gap semiconductors that can be processed at low temperatures on glass or plastic substrates. Electronic systems that cover large area and curved surfaces together with transparency bring the possibility of numerous applications that are outside the scope of rigid wafer based electronics. Flexible electronics, electronic textiles, a wearable wellness system, and sensory skin are some of the applications of flexible electronics. The key factor in the realization of transparent electronics is the development of high performance fully transparent thin film transistors. Thin film transistors (TFTs) based on transparent conducting amorphous oxide semiconductors (TAOS) such as InGaZnO (IGZO), zinc tin oxide (ZTO), zinc indium tin oxide (ZITO), etc. provide additional functionalities like transparency, high field effect mobility and potential for room temperature processing. The performance of these TAOS based TFTs are superior to their silicon (a-Si:H TFTs) and organic TFTs. Though there are monographs and books on a-Si:H TFTs and organic TFTs, a book on TAOS based TFTs is rare. This book introduces the graduate students and beginners to the field of amorphous semiconductors. The mass production of this kind of TFTs on large area substrates involves the complications associated with controlling the composition of oxide compound semiconductor thin film material. Pulsed laser deposition allows for the growth of an oxide semiconductor in a very high oxygen rich environment while co-sputtering is an effective technique for the growth of a multicomponent film and to control the film chemical composition in a systematic and easy way. These manufacturing aspects will be of interest to those working in the industry. The review on the n channel, p channel TFTs, and the detailed description on the extraction of various TFT parameters like the threshold voltage, field effect mobility, sub threshold slope and on-off ratio etc. will be ready reckoner to those working in the field of transparent electronics.

Book Study on Transparent Amorphous Indium Oxide Thin Film Transistors Technology

Download or read book Study on Transparent Amorphous Indium Oxide Thin Film Transistors Technology written by and published by . This book was released on 2014 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Non volatile Memory and Circuits for Transparent Electronics

Download or read book Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Non volatile Memory and Circuits for Transparent Electronics written by and published by . This book was released on 2006 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The ability to make electronic devices, that are transparent to visible and near infrared wavelength, is a relatively new field of research in the development of the next generation of optoelectronic devices. A new class of inorganic thin-film transistor (TFT) channel material based on amorphous oxide semiconductors, that show high carrier mobility and high visual transparency, is being researched actively. The purpose of this dissertation is to develop amorphous oxide semiconductors by pulsed laser deposition, show their suitability for TFT applications and demonstrate other classes of devices such as non-volatile memory elements and integrated circuits such as ring oscillators and active matrix pixel elements. Indium gallium zinc oxide (IGZO) is discussed extensively in this dissertation. The influence of several deposition parameters is explored and oxygen partial pressure during deposition is found to have a profound effect on the electrical and optical characteristics of the IGZO films. By optimizing the deposition conditions, IGZO TFTs exhibit excellent electrical properties, even without any intentional annealing. This attribute along with the amorphous nature of the material also makes IGZO TFTs compatible with flexible substrates opening up various applications. IGZO TFTs with saturation field effect mobility of 12 â€" 16 cm2 V-1 s-1 and subthreshold voltage swing of 200 mV decade-1 have been fabricated. By varying the oxygen partial pressure during deposition the conductivity of the channel was controlled to give a low off-state current ~ 10 pA and a drain current on/off ratio of 1 x108. Additionally, the effects of the oxygen partial pressure and the thickness of the semiconductor layer, the choice of the gate dielectric material and the device channel length on the electrical characteristics of the TFTs are explored. To evaluate IGZO TFT electrical stability, constant voltage bias stress measurements were carried out. The observed logarithmic depende.

Book Transparent Electronics

Download or read book Transparent Electronics written by Elvira Fortunato and published by . This book was released on with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Amorphous Indium Gallium Zinc Oxide Based Thin Film Transistors and Circuits

Download or read book Amorphous Indium Gallium Zinc Oxide Based Thin Film Transistors and Circuits written by Haojun Luo and published by . This book was released on 2013 with total page 155 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Metal oxide Based Transparent Conductive Oxides and Thin Film Transistors for Flexible Electronics

Download or read book Metal oxide Based Transparent Conductive Oxides and Thin Film Transistors for Flexible Electronics written by Anil Indluru and published by . This book was released on 2011 with total page 138 pages. Available in PDF, EPUB and Kindle. Book excerpt: The object of this study is to investigate and improve the performance/stability of the flexible thin film transistors (TFTs) and to study the properties of metal oxide transparent conductive oxides for wide range of flexible electronic applications. Initially, a study has been done to improve the conductivity of ITO (indium tin oxide) films on PEN (polyethylene naphthalate) by inserting a thin layer of silver layer between two ITO layers. The multilayer with an optimum Ag mid-layer thickness, of 8 nm, exhibited excellent photopic average transmittance (~ 88 %), resistivity (~ 2.7 10-5 -cm.) and has the best Hackee figure of merit (41.0 10-3 omega-1). The electrical conduction is dominated by two different scattering mechanisms depending on the thickness of the Ag mid-layer. Optical transmission is explained by scattering losses and absorption of light due to inter-band electronic transitions. A systematic study was carried out to improve the performance/stability of the TFTs on PEN. The performance and stability of a-Si:H and a-IZO (amorphous indium zinc oxide) TFTs were improved by performing a systematic low temperature (150 °C) anneals for extended times. For 96 hours annealed a-Si:H TFTs, the sub-threshold slope and off-current were reduced by a factor ~ 3 and by 2 orders of magnitude, respectively when compared to unannealed a-Si:H TFTs. For a-IZO TFTs, 48 hours of annealing is found to be the optimum time for the best performance and elevated temperature stability. These devices exhibit saturation mobility varying between 4.5-5.5 cm2/V-s, ION/IOFF ratio was 106 and a sub-threshold swing variation of 1-1.25 V/decade. An in-depth study on the mechanical and electromechanical stress response on the electrical properties of the a-IZO TFTs has also been investigated. Finally, the a-Si:H TFTs were exposed to gamma radiation to examine their radiation resistance. The interface trap density (Nit) values range from 5 to 6 1011 cm-2 for only electrical stress bias case. For "irradiation only" case, the Nit value increases from 51011 cm-2 to 21012 cm-2 after 3 hours of gamma radiation exposure, whereas it increases from 51011 cm-2 to 41012 cm-2 for "combined gamma and electrical stress."