Download or read book A Study of Aluminum Gallium Nitride gallium Nitride Polarization Barriers Aluminum Gallium Nitride silicon Carbide Heterojunction Bipolar Transistors and Polarization based Ohmic Contacts written by Choudhury Jayant Praharaj and published by . This book was released on 2004 with total page 238 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book A Study of Aluminium Gallium Nitride gallium Nitride Polarization Barriers Aluminium Gallium Nitride silicon Carbide Heterojunction Bipolar Transistors and Polarization based Ohmic Contacts written by Choudhury Jayant Praharaj and published by . This book was released on 2004 with total page 115 pages. Available in PDF, EPUB and Kindle. Book excerpt: Three perpendicular-transport structures using wide band-gap semiconductors were studied. A 50 A thick Aluminium Gallium Nitride polarization barrier showed rectifying characteristics as predicted by theory. Heterojunction Bipolar Transistors using n-Gallium Nitride/p-Silicon Carbide emitter and n-Aluminium Gallium Nitride/p-Gallium Nitride/p-Silicon Carbide emitter, and Silicon Carbide collector, were fabricated and characterized for current gain. The Heterojunction Bipolar Transistor with n-Gallium Nitride/p-Silicon Carbide emitter showed no modulation of output current with input current due to small unrecombined electron currents and large collector-base leakage currents. The Heterojunction Bipolar Transistor with n-Aluminium Gallium Nitride/p-Gallium Nitride/p-Silicon Carbide emitter had a current gain of 0.02. Ohmic contacts to p-type Gallium Nitride using Indium Gallium Nitride cap layers and to p-type Aluminium Gallium Nitride using Gallium Nitride cap layers were designed. Large improvements in ohmic contact resistances were predicted over ohmic contacts to bulk p-type nitride materials in the absence of cap layers.
Download or read book Design and Fabrication of Aluminum Gallium Nitride written by Kenneth Kanin Chu and published by . This book was released on 2000 with total page 298 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Gallium Nitride Processing for Electronics Sensors and Spintronics written by Stephen J. Pearton and published by Springer Science & Business Media. This book was released on 2006-02-24 with total page 402 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high speed memory, logic and photonic devices. Useful spintronic devices will need materials with practical magnetic ordering temperatures and current research points to gallium and aluminium nitride magnetic superconductors as having great potential. This book details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high temperature electronics. Written by three leading researchers in nitride semiconductors, the book provides an excellent introduction to gallium nitride technology and will be of interest to all reseachers and industrial practitioners wishing to keep up to date with developments that may lead to the next generation of transistors, lasers and integrated magnetic sensors.
Download or read book Gallium Nitride and Silicon Carbide Power Technologies written by K. Shenai and published by The Electrochemical Society. This book was released on 2011 with total page 361 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Gallium Nitride GaN written by Farid Medjdoub and published by CRC Press. This book was released on 2017-12-19 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology. A semiconductor commonly used in bright light-emitting diodes, GaN can serve as a great alternative to existing devices used in microelectronics. It has a wide band gap and high electron mobility that gives it special properties for applications in optoelectronic, high-power, and high-frequency devices, and because of its high off-state breakdown strength combined with excellent on-state channel conductivity, GaN is an ideal candidate for switching power transistors. Explores Recent Progress in High-Frequency GaN Technology Written by a panel of academic and industry experts from around the globe, this book reviews the advantages of GaN-based material systems suitable for high-frequency, high-power applications. It provides an overview of the semiconductor environment, outlines the fundamental device physics of GaN, and describes GaN materials and device structures that are needed for the next stage of microelectronics and optoelectronics. The book details the development of radio frequency (RF) semiconductor devices and circuits, considers the current challenges that the industry now faces, and examines future trends. In addition, the authors: Propose a design in which multiple LED stacks can be connected in a series using interband tunnel junction (TJ) interconnects Examine GaN technology while in its early stages of high-volume deployment in commercial and military products Consider the potential use of both sunlight and hydrogen as promising and prominent energy sources for this technology Introduce two unique methods, PEC oxidation and vapor cooling condensation methods, for the deposition of high-quality oxide layers A single-source reference for students and professionals, Gallium Nitride (GaN): Physics, Devices, and Technology provides an overall assessment of the semiconductor environment, discusses the potential use of GaN-based technology for RF semiconductor devices, and highlights the current and emerging applications of GaN.
Download or read book Charge Instability and Localization in Aluminum Gallium Nitride gallium Nitride Heterostructures and Heterostructure Field Effect Transistors Studied by Kelvin Probe Microscopy written by Goutam Koley and published by . This book was released on 2003 with total page 378 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Computer aided Design and Processing of Aluminum Gallium Arsenide gallium Arsenide Heterojunction Bipolar Transistors to Study Emitter size Effects written by Lynnita Kaye Knoch and published by . This book was released on 1989 with total page 486 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Gallium Nitride and Silicon Carbide Power Technologies 7 written by M. Dudley and published by The Electrochemical Society. This book was released on with total page 297 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Polarization Field Enhanced Transport in Gallium Nitride Heterostructures for Energy Harvesting and Sensing written by Ananth Saran Yalamarthy and published by . This book was released on 2019 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Over the past decade, we have witnessed a renaissance in power and RF electronics -- enabled by breakthroughs in wide-band gap semiconductors made using III-nitride materials. Yet, an exciting but emerging application of these materials is their use in extreme temperature environments such as oil/gas, combustion and space, where traditional silicon electronics do not operate. In this thesis, I discuss how polarization fields in gallium nitride on silicon (GaN-on-Si) can be used to make thermoelectric energy harvesting and sensing devices to achieve this ambitious goal of "extreme environment" operation. In the first part of this thesis, I discuss measurements of the thermoelectric properties of the aluminum gallium nitride/gallium nitride (AlGaN/GaN) two-dimensional electron gas (2DEG) from room temperature to 300 degrees Celsius. Our experiments demonstrate state-of-the-art thermoelectric power factors and thermoelectric figures of merit ~4x better than doped III-nitride materials. These properties can enable a monolithic GaN-on-Si micro-thermoelectric generator with a power density of ∼1 mW for 1 cm by 1 cm footprint, which can be used to power an extreme environment IoT node. I follow this with a brief digression on the thermoelectric properties of AlGaN/GaN films on a pyramidal Si substrate, a strategy that can increase power density in micro-thermoelectric generators. Switching gears, I next discuss how the transfer of momentum from lattice phonons to electrons, a phenomenon called phonon drag, can be used to boost the low temperature thermoelectric performance in the AlGaN/GaN 2DEG. The measurements of the phonon drag Seebeck coefficient are conducted by varying the thickness of the underlying GaN layer. For large GaN thickness (∼1.2 micrometers), we find that ∼32% of Seebeck coefficient at room temperature can be attributed to phonon drag. At 50 K, the drag component increases significantly to ∼88%. In the last part of my thesis, I discuss how manipulation of the polarization fields in the AlGaN/GaN 2DEG can be used for high-performance sensing applications. I first discuss a model for studying electronic transport in AlGaN/GaN transistors under small applied strains, which may find use in pressure sensing and device packaging. Then, I present measurements of a novel ultraviolet (UV) photodetector employing the 2DEG formed at the AlGaN/GaN interface as an interdigitated transducer. This photodetector exhibits a record high normalized photocurrent-to-dark current ratio, which enables highly sensitive detection of UV optical stimuli. Overall, the techniques explored in this thesis are an important step towards the maturation of the AlGaN/GaN-on-Si platform as an extreme environment IoT node.
Download or read book Gallium Nitride And Silicon Carbide Power Devices written by B Jayant Baliga and published by World Scientific Publishing Company. This book was released on 2016-12-12 with total page 592 pages. Available in PDF, EPUB and Kindle. Book excerpt: During the last 30 years, significant progress has been made to improve our understanding of gallium nitride and silicon carbide device structures, resulting in experimental demonstration of their enhanced performances for power electronic systems. Gallium nitride power devices made by the growth of the material on silicon substrates have gained a lot of interest. Power device products made from these materials have become available during the last five years from many companies.This comprehensive book discusses the physics of operation and design of gallium nitride and silicon carbide power devices. It can be used as a reference by practicing engineers in the power electronics industry and as a textbook for a power device or power electronics course in universities.
Download or read book International Aerospace Abstracts written by and published by . This book was released on 1997 with total page 940 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Gallium Nitride and Related Wide Bandgap Materials and Devices written by R. Szweda and published by Elsevier. This book was released on 2000-07-07 with total page 459 pages. Available in PDF, EPUB and Kindle. Book excerpt: The second edition of Gallium Nitride & Related Wide Bandgap Materials and Devices provides a detailed insight into the global developments in GaN, SiC and other optoelectronic materials. This report also examines the implication for both suppliers and users of GaN technology. For a PDF version of the report please call Tina Enright on +44 (0) 1865 843008 for price details.
Download or read book Fabrication and Characterization of Aluminum Gallium Arsenide gallium Arsenide Heterojunction Bipolar Transistors written by Amish J. Shah and published by . This book was released on 1991 with total page 144 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Interface Study of High K Dielectric on Aluminium Gallium Nitride gallium Nitride Heterostructure written by Xiaoye Qin and published by . This book was released on 2014 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: AlGaN/GaN high electron mobility transistors are promising for high frequency and high power application due to their unique properties. The Al2 O3 and HfO2 are attractive materials which suppress the gate leakage current of AlGaN/GaN high electron mobility transistors. Since the interface quality of AlGaN and high k dielectrics are critical to the device performance, such as the threshold voltage and interface state density ( Dit ), it is therefore necessary to understand that the relationship between interface chemistry and device performance is fundamental for examining optimization strategies for device applications. Firstly, the impact of various chemical pretreatments on AlGaN surface is studied. Then the interfaces formed upon atomic layer deposition (ALD) of Al 2 O3 and HfO2 are investigated using in situ X-ray photoelectron spectroscopy (XPS). The impacts of ALD of Al2 O3 and HfO2 on native AlGaN are studied by capacitance voltage characterization. The XPS and device results uncover a high density of interface states. in situ N2 forming gas and O2 plasma pretreatments prior to ALD as optimization strategies are investigated using in situ XPS, LEED and C-V characterizations.
Download or read book Material and Device Studies for the Development of Gallium Nitride Heterojunction Bipolar Transistors by Molecular Beam Epitaxy written by Wei Li and published by . This book was released on 2008 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: Due to its unique physical properties, gallium nitride (GaN) is under intense investigation for the development of transistors for high power, high frequency and high temperature applications. The majority of existing literature addresses field effect transistors. This dissertation addresses a wide spectrum of materials and device studies required for the development of GaN-based heterojunction bipolar transistors (HBTs). The investigated structure has the emitter region based on n-Al x Ga 1-x N alloys, while the base and collector were based on p-In y Ga 1-y N and n-GaN, respectively. The growth and doping of the various layers of the transistor structure, on sapphire substrate, GaN-templates and free standing GaN substrates are addressed. Particular emphasis was placed on the p-type doping of the AlGaN and InGaN alloys with magnesium, both doping of bulk films as well as superlattices. The experimental results were compared with theoretical predictions of a self-consistent solution to the one-dimensional poisson and schrodinger equations. A hole concentration for p-InGaN of 9x10 18 CM -3 was obtained, which is the highest value published. The device aspect of this research addressed issues related to the development of novel methods of selective growth by molecular beam epitaxy (MBE) of the emitter onto the base. This was found to be necessary to avoid damage of the base during mesa etching. The final product of this research was the fabrication and DC characterization of HBT devices. This included various lithography, metallization, etching and annealing steps. The devices were evaluated under common base and common emitter configurations and the best result obtained was a room temperature gain of 59.
Download or read book Investigations of the Gallium Nitride Aluminum Nitride and Indium Nitride Semiconductors Structural Optical Electronic and Interfacial Properties written by Samuel Clagett Strite (III) and published by . This book was released on 1993 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Described in this thesis is an investigation of some fundamental physical properties of both zincblende and wurtzite Group III - Nitride wide bandgap semiconductor materials. All of the thin films studied were grown by plasma-enhanced molecular beam epitaxy on either GaAs and SiC substrates. This growth method proved to be suitable for nitride expitaxial growth although compromises between the plasma power and the crystal growth rate had to be sought. The zincblende polytypes of GaN and InN were studied with the intent of evaluating their potential as a wide bandgap semiconductor system for short wavelength optical devices. The metastability of these crystals has led us to the conclusion that the zincblende nitrides are not a promising candidate for these applications due to their tendency to nucleate wurtzite domains. Bulk samples of zincblende GaN and InN and wurtzite GaN, AlN and InN were studied by x-ray photoemission spectroscopy (XPS) in an effort to determine their valence band structure. We report the various energies of the valence band density of states maxima as well as the ionicity gaps of each material. Wurtzite GaN/AlN and InN/AlN heterostructures were also investigated by XPS in order to estimate the valence band discontinuities of these heterojunctions. We measured valence band discontinuities of $Delta$E$rmsbsp{v}{GaN/AlN}$ = 0.4 $pm$ 0.4 eV and $Delta$E$rmsbsp{v}{InN/AlN}$ = 1.1 $pm$ 0.4 eV. Our results indicate that both systems have heterojunction band lineups fundamentally suitable for common optical device applications.
