Download or read book A Novel Approach to Modeling the Effects of Radiation in Gallium Arsenide Solar Cells Using Silvaco s ATLAS Software written by Aaron L. Crespin and published by . This book was released on 2004-09-01 with total page 85 pages. Available in PDF, EPUB and Kindle. Book excerpt: The effects of radiation in GaAs solar cells has been extensively researched and the results of numerous investigation have yielded a considerable amount of information about the degradation in irradiated solar cells. This thesis establishes a novel method in which to use Silvaco's physically-based device simulator, ATLAS, to model the effects of radiation on solar cell output characteristics. A virtual model representing a single junction GaAs solar cell was created in ATLAS. The effects of radiation were modeled using carrier trapping statements representing the defects associated with various fluence levels of 1 MeV electron radiation which were characterized with Deep Level Transient Spectroscopy techniques. The resulting output characteristics of the virtual solar cell, illuminated with a simulated AM0 spectrum, were compared to published experimental measurements for GaAs solar cells of the same dimensions. The virtual solar cell demonstrated a good correlation between the measured and virtual solar cell output characteristics and accurate representation of the spectral response. Complete ATLAS and MATLAB codes are included in appendices.
Download or read book Modeling Laser Effects on Multi junction Solar Cells Using Silvaco ATLAS Software for Spacecraft Power Beaming Applications written by Jamie E. VanDyke and published by . This book was released on 2010 with total page 119 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis explores the possibility of power beaming from terrestrial sites to orbiting spacecraft. Solar cell annealing to repair radiation damaged cells and power augmentation for satellites that are battery limited are two of the possible uses for power beaming. Through modeling and simulation a more complete understanding of the expected system response was obtained. A virtual wafer fabrication tool (VWFT) called Silvaco ATLAS was used to simulate a previously optimized InGaP/GaAs/Ge triple junction solar cell's response to a three laser system. The software was used to determine the optimum wavelength for each layer of the cell and then the intensity of the lasers was determined to achieve the same output of the cell as experienced under solar illumination, thereby replacing the sun. The original cell boasted 36.29% efficiency under solar illumination, but by applying the laser system the same cell operated at 51.15% efficiency. The approach and lessons learned can be applied to any solar cell design.
Download or read book Effects of Front and Bottom Texturings on Gallium Arsenide Solar Cell Characteristics written by Phaneendra Bommareddy and published by . This book was released on 2012 with total page 125 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Gallium Arsenide solar cells are of particular interest in many applications due to its advantages over silicon. Its high absorptivity requires a cell that is only few microns thick, compared to silicon. GaAs cells are relatively insensitive to heat and their resistance to radiation also makes the GaAs based cell preferable to Si for extra-terrestrial applications. In this research, the effects of front and bottom texturing on the GaAs solar cell were studied, in particular their effects on the fill factor, open circuit voltage and the short circuit currents were analyzed. Silvaco, an industry standard simulation suite was used for the design and analysis of the various texturing for the GaAs solar cell. In this thesis, five different cell models consisting of the un-textured cell, top, bottom, top and bottom, as well as meta-structures were considered for analysis. Using AM1.5 spectrum with the aid of beam parameter of the simulation software under 1-sun condition, Isc and Voc were obtained. The IV characteristics were plotted for all the models in the presence and absence of light, providing light and dark currents for the cell. Maximum power generated in the device was measured and the Fill Factor calculated. The texturing's were considered on the window layer and above the gold mirror layer for top and bottom texturing's respectively, with In0.5Ga0.5P and also with a combination of alternating metal dielectric slabs forming a meta structure over a gold layer on the window layer. Results for these designs showed that the performance of various GaAs solar cells with In0.5Ga0.5P texturing on the top has better device characteristics compared to other designs.
Download or read book GaAs Solar Cell Radiation Handbook written by National Aeronautics and Space Administration (NASA) and published by Createspace Independent Publishing Platform. This book was released on 2018-07-25 with total page 328 pages. Available in PDF, EPUB and Kindle. Book excerpt: History of GaAs solar cell development is provided. Photovoltaic equations are described along with instrumentation techniques for measuring solar cells. Radiation effects in solar cells, electrical performance, and spacecraft flight data for solar cells are discussed. The space radiation environment and solar array degradation calculations are addressed. Anspaugh, B. E. Jet Propulsion Laboratory NASA-CR-203421, NAS 1.26:203421, JPL-Publ-96-9 ...
Download or read book A Simple Model of Space Radiation Damage in GaAs Solar Cells written by John William Wilson and published by . This book was released on 1983 with total page 36 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book A Simple Model of Space Radiation Damage in GaAs Solar Cells written by John William Wilson and published by . This book was released on 1983 with total page 36 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Annealing of Radiation Damaged Gallium Arsenide Solar Cells by Laser Illumination written by Richard Dillon Kramer and published by . This book was released on 1994 with total page 84 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this research, preliminary results of a new approach for annealing previously irradiated Gallium Arsenide solar cells is reported. This technique examines the use of laser illumination to induce Forward-Biased current annealing. Five GaAs solar cells were irradiated with 65 MeV electrons at varying fluence levels. Visible laser light produced a 0.5 A/sq cm forward-biased current density and raised the solar cell temperature by 30 deg C. Ten to fifteen percent recovery of degraded parameters was achieved in four of the five tested cells. The results show that a laser can produce some annealing in radiation damaged GaAs solar cells. Further investigation into the results also indicate that the 65 MeV energy level of the electron irradiation could have caused unrecoverable permanent damage to the solar cells. Follow up research of this annealing technique should be conducted on GaAs cells that are being irradiated at a lower energy level as well as lower fluence level. Repetitive annealing of lightly damaged cells in previous research has provided appreciative recovery using forward bias current techniques. One can expect similar results using the laser induced annealing technique proposed in this research.
Download or read book Gallium Arsenide Photovoltaic Dense Array for Concentrator Applications written by J. A. Cape and published by . This book was released on 1980 with total page 116 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Gallium Arsenide GaAs Solar Cell Modeling Studies written by John H. Heinbockel and published by . This book was released on 1980 with total page 102 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Simulating Radiation Induced Defects on Semiconductor Devices written by Dewey C. Gladney and published by . This book was released on 2004-09-01 with total page 79 pages. Available in PDF, EPUB and Kindle. Book excerpt: Exploring semiconductor lifetime, reliability and performance is a never-ending science for today's modern electronics. One significant problem that affects all of these areas is radiation-induced damage. Making calculations to determine how semiconductor devices will hold up in radiation-harsh environments has to be achieved in order to determine system lifetime once placed in their operational capacity. Today's high-technology investments in such areas as satellite design, medical advances, military and commercial hardware, demand thorough understanding in radiation damage. Modeling semiconductor devices with computer-based simulation will provide a cost and time savings over a repetitive design and testing sequence. This thesis models and simulates an industry standard solar cell and a light a light emitting diode (LED), using the SILVACO ATLAS(trade mark) computer-based program. Using this software, theses simulations are generated based on known radiation-induced defects on gallium arsenide (GaAs) semiconductive devices derived from Deep Level Transient Spectroscopy (DLTS) studies. A comparison is then made with another radiation-induced damage prediction method, known as Non-Ionizing Energy Loss (NIEL), to see if the SILVACO ATLAS(trade mark) models can be used as an alternative.
Download or read book Radiation Effects on A1GaAs GaAs Solar Cells Using 0 9 3 0 MeV Protons and 1 0 1 4 MeV Electrons written by L. F. Lowe and published by . This book was released on 1977 with total page 33 pages. Available in PDF, EPUB and Kindle. Book excerpt: Aluminum gallium arsenide solar cells were irradiated with 1.0 and 1.4 MeV electrons, and with 0.9 and 3.0 MeV protons to determine radiation sensitivity. Electron fluences ranged from 1 x 10 to the 14th power to 3 x 10 to the 16 power electrons, 1 sq cm, and proton fluences from 5 x 10 to the 10 power to 2.7 x 10 to the 12th power/sqcm. A solar simulator and a tungsten lamp were used to evaluate changes in the current-voltage characteristics curves. In most cases, AlGaAs solar cells showed a greater resistance to radiation than silicon cells.
Download or read book The Physics and Modeling of Gallium arsenide Solar Cells written by Paul David DeMoulin and published by . This book was released on 1988 with total page 181 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Analysis of Costs of Gallium Arsenide and Silicon Solar Arrays for Space Power Applications written by Kent S. Jefferies and published by . This book was released on 1981 with total page 24 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Generative Modeling and Sensitivity Analysis of Gallium Arsenide based Solar Cell Device Processes written by Maryam Molamohammadi and published by . This book was released on 2021 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: "Modeling and process optimization of solar cell devices is a complex procedure due to the high-dimensional parameter space. Moreover, the need for enhancing renewable energy market share is an undeniable fact. Machine learning is rapidly emerging in many fields while providing a promising toolbox for researchers to study complex problems more efficiently. Traditionally, research in materials science has involved a trial-and-error process that often requires various resources. With the help of machine learning, we can explore the high-dimensional problems with improved accuracy and efficiency and fewer user-imposed assumptions.This thesis presents the modeling and sensitivity analysis of GaAs-based (Gallium arsenide-based) solar cell device processes. We propose a unifying framework for learning a solar cell performance function while providing intuitive interpretations based on the sensitivity analysis of the cell performance with respect to the material variables. In fact, this framework would be a faster and more computationally efficient replacement for its equivalent simulator in a downstream task of sensitivity analysis and consequently design optimization. We use the conditional variational autoencoder and multilayer perceptron for the generative modeling task and Jacobian-based sensitivity indices for the sensitivity analysis task. Furthermore, in the results, we validate our modeling approach with a baseline multilayer perceptron and our sensitivity analysis method with a sampling-based sensitivity analysis approach. We further demonstrate how the sensitivity analysis can be potentially useful from the design perspective as well as interpretability of possible device underperformance"--
Download or read book High Energy Electron Radiation Degradation of Gallium Arsenide Solar Cells written by Don W. Gold and published by . This book was released on 1986 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: A need existed to perform high energy electron irradiation experiments on gallium arsenide solar cells. To support this research, an automated solar cell test facility was constructed, gallium arsenide solar cells were obtained, and the Naval Postgraduate School LINAC facility was utilized to irradiate the cells to selected fluence levels at 20 MEV energies. Equivalent damage coefficients were calculated, and it was found that the average maximum power output decreased by 50% following a cumulative irradiation by electrons to a total fluence of 1 X 10 to the 15th power sq. cm.
Download or read book Analysis of Radiation Damaged and Annealed Gallium Arsenide and Indium Phosphide Solar Cells Using Deep Level Transient Spectroscopy written by Joseph A. Bruening and published by . This book was released on 1993 with total page 126 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power loss in spacecraft solar cells due to radiation damage was investigated. The mechanisms behind the degradation and based on deep-level defects in the crystalline lattice structure of the solar cell. Through a process known as Deep Transient Spectroscopy (DLTS), a correlation can be made between damage/recovery and trap energy of the cell. Gallium (GaAs/Ge) and Indium Phosphide (InP) solar cells were subjected to 1 MeV electron irradiation, to fluences of 1E16 electrons/sq cm. Attempts at recovery included thermal annealing, alone, and with an applied forward bias current, and injection annealing. Various cycles of irradiation, annealing and DLTS were performed, in an attempt to correlate damage to trap energy level and growth. The results show that DLTS cannot be performed on GaAs/Ge, and no recovery was apparent in these cells. DLTS analysis of InP indicated excellent photoinjection annealing recovery at a variety of temperatures. Lower energy level defects are associated with the recovery of the cells while the higher energy traps are indicative of permanent degradation in the Inp solar cells. Applying this information to future research could increase satellite mission life, and significantly reduce space mission costs. Radiation damage in solar cells, DLTS, Annealing, Heterojunction, Gallium arsenide, Indium phosphide.
Download or read book Analysis of Radiation Damaged and Annealed Gallium Arsenide and Indium Phosphide Solar Cells Using Deep Level Transient Spectroscopy Techniques written by and published by . This book was released on 1991 with total page 181 pages. Available in PDF, EPUB and Kindle. Book excerpt: Degradation of solar cell performance from radiation damage was found to be reversed through annealing processes. The mechanisms behind the degradation and recovery is based on deep-level traps, or defects, in the lattice structure of the solar cell. Through a process known as Deep Level Transient Spectroscopy (DLTS), a correlation can be made between damage/recovery and trap energy level/concentration of the cell. Gallium Arsenide (GaAs) and Indium Phosphide (InP) solar cells were subjected to 1 MeV electron irradiation by a Dynamitron linear acceleration at two fluence levels of 1E14 and 1E15 electrons/sq cm. The process of annealing included thermal annealing at 90 C with forward bias current and thermal annealing alone (for GaAs). After each cycle, DLTS measurements were taken to determine the energy level of the traps and their concentration. Multiple cycles of irradiation, annealing and DLTS were performed to observe the correlation between degradation and recovery to trap energy level and concentration. The results show that the lower energy level traps are associated with the recovery of the cells while the higher level traps are associated with the overall permanent degradation of the cells.
