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Book A Low Voltage Fully Integrated 4 5 6 GHz CMOS Variable Gain Low Noise Amplifier InGaP

Download or read book A Low Voltage Fully Integrated 4 5 6 GHz CMOS Variable Gain Low Noise Amplifier InGaP written by and published by . This book was released on 2003 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A 4.5-6 GHz CMOS low-voltage wideband variable gain low noise amplifier (VGLNA)with wide gain-control range has been demonstrated in this paper. The VGLNA, operating at a supply voltage as low as 1 V, achieves a small signal gain of 20 dB and 3-dB bandwidth of 1.5 GHz with good return losses. The noise figure is 3.5 dB at 5.5 GHz. A figure-of-merit for gain efficiency (Gain/PDC)of 1.23 dB/mW is achieved, which is believed to be the best among reported results for a CMOS VGLNA operating at multi-GHz frequency.

Book Conference Proceedings

Download or read book Conference Proceedings written by and published by . This book was released on 2003 with total page 528 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Design of Low Noise Amplifiers for Ultra Wideband Communications

Download or read book Design of Low Noise Amplifiers for Ultra Wideband Communications written by Roberto Díaz Ortega and published by McGraw Hill Professional. This book was released on 2014-01-13 with total page 129 pages. Available in PDF, EPUB and Kindle. Book excerpt: Cutting-edge techniques for ultra-wideband, low-noise amplifier design This pioneering resource presents alternatives for implementing power- and area-efficient integrated low-noise amplifiers for ultra-wideband communications. Design methodologies for distributed amplifiers, feedback amplifiers, inductor structures with reduced area, and inductorless techniques are discussed. Cowritten by international experts in industry and academia, this book addresses the state of the art in integrated circuit design in the context of emerging systems. Design of Low-Noise Amplifiers for Ultra-Wideband Communications covers: Ultra-wideband overview and system approach Distributed amplifiers Wideband low-noise amplifiers Feedback wideband low-noise amplifiers Inductorless techniques

Book Low Noise Wide Band Amplifiers in Bipolar and CMOS Technologies

Download or read book Low Noise Wide Band Amplifiers in Bipolar and CMOS Technologies written by Zhong Yuan Chong and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 219 pages. Available in PDF, EPUB and Kindle. Book excerpt: Analog circuit design has grown in importance because so many circuits cannot be realized with digital techniques. Examples are receiver front-ends, particle detector circuits, etc. Actually, all circuits which require high precision, high speed and low power consumption need analog solutions. High precision also needs low noise. Much has been written already on low noise design and optimization for low noise. Very little is available however if the source is not resistive but capacitive or inductive as is the case with antennas or semiconductor detectors. This book provides design techniques for these types of optimization. This book is thus intended firstly for engineers on senior or graduate level who have already designed their first operational amplifiers and want to go further. It is especially for engineers who do not want just a circuit but the best circuit. Design techniques are given that lead to the best performance within a certain technology. Moreover, this is done for all important technologies such as bipolar, CMOS and BiCMOS. Secondly, this book is intended for engineers who want to understand what they are doing. The design techniques are intended to provide insight. In this way, the design techniques can easily be extended to other circuits as well. Also, the design techniques form a first step towards design automation. Thirdly, this book is intended for analog design engineers who want to become familiar with both bipolar and CMOS technologies and who want to learn more about which transistor to choose in BiCMOS.

Book Wideband Low Noise Amplifiers Exploiting Thermal Noise Cancellation

Download or read book Wideband Low Noise Amplifiers Exploiting Thermal Noise Cancellation written by Federico Bruccoleri and published by Springer Science & Business Media. This book was released on 2006-03-30 with total page 191 pages. Available in PDF, EPUB and Kindle. Book excerpt: Low Noise Amplifiers (LNAs) are commonly used to amplify signals that are too weak for direct processing for example in radio or cable receivers. Traditionally, low noise amplifiers are implemented via tuned amplifiers, exploiting inductors and capacitors in resonating LC-circuits. This can render very low noise but only in a relatively narrow frequency band close to resonance. There is a clear trend to use more bandwidth for communication, both via cables (e.g. cable TV, internet) and wireless links (e.g. satellite links and Ultra Wideband Band). Hence wideband low-noise amplifier techniques are very much needed. Wideband Low Noise Amplifiers Exploiting Thermal Noise Cancellation explores techniques to realize wideband amplifiers, capable of impedance matching and still achieving a low noise figure well below 3dB. This can be achieved with a new noise cancelling technique as described in this book. By using this technique, the thermal noise of the input transistor of the LNA can be cancelled while the wanted signal is amplified! The book gives a detailed analysis of this technique and presents several new amplifier circuits. This book is directly relevant for IC designers and researchers working on integrated transceivers. Although the focus is on CMOS circuits, the techniques can just as well be applied to other IC technologies, e.g. bipolar and GaAs, and even in discrete component technologies.

Book An Ultra Wide Band CMOS Low Noise Amplifier Design

Download or read book An Ultra Wide Band CMOS Low Noise Amplifier Design written by Nahusha Bhadravati Mohankumar and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: An RF ultra wide band low noise amplifier designed for the frequency range of 12-18 GHz of operation is presented in this paper. The low noise amplifier is designed using the state-of-the-art complementary metal oxide semiconductor 45 nm technology. Berkeley's Predictive Technology Model (PTM) is used to generate a fairly accurate mathematical model and the SPICE data is implemented into the BSIM 4 version of the Advanced Design Systems (ADS) program. The low noise design strategy is mainly based on the analysis of high frequency CMOS operation. This LNA has two stages: the first stage is a RL feedback amplifier with an inductive load, and the second stage is a RC feedback amplifier with an inductive load. High frequency small signal MOSFET models with shunt-shunt feedback are used to determine the input impedance, output impedance and gain equations governing this circuit. Simulation results of this two stage feedback amplifier demonstrate a gain of 19 dB over a 6 GHz bandwidth, high linearity, and a low noise figure-less than 2.4 dB. This is a low voltage high current amplifier which requires a supply voltage of simply 0.5 V and has low power consumption (~13.5 mW).

Book Design an Ultra Wideband Low Noise Amplifier for 6 GHz Applications

Download or read book Design an Ultra Wideband Low Noise Amplifier for 6 GHz Applications written by Jitendra Mishra and published by LAP Lambert Academic Publishing. This book was released on 2014-05-21 with total page 76 pages. Available in PDF, EPUB and Kindle. Book excerpt: In recent years, down scaling in CMOS advanced technologies has provided high performance in the digital circuits and reduced cost thereby meeting to a large extent the increasing demand of wireless communication products. With this technology advancement, the unity-current gain frequency of CMOS technology is now over several tens of GHz making the realization of system on-chip solution possible which turns to further reduced cost. The concept of the RFIC design needed for the design of low noise amplifier such as gain, noise, stability, linearity, power consumption etc is discussed in the report. An overview has been given on different LNA architecture, their advantages and disadvantages have also been discussed.The designed circuit is simulated with the help of specture simulator from cadence design system using UMC .18um CMOS technology. After the simulation we got the simulated result of low noise amplifier as forward voltage gain(S21) of 18.53dB, noise figure is 1.8dB and minimum noise figure is 1.6dB, input reflection coefficient (S11) is -24dB, output reflection coefficient(S22) is -15dB, stability factor (Kf) is 4, IIP3 -10 dBm by using power supply voltage of 1.8v.

Book 5 GHZ CMOS Low Noise Amplifier for Wireless Lan Applications

Download or read book 5 GHZ CMOS Low Noise Amplifier for Wireless Lan Applications written by Zubaida Yusoff and published by . This book was released on 2002 with total page 120 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Electrical Electronics Abstracts

Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1997 with total page 2240 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Design and Implementation of 60 GHz CMOS Power Amplifiers

Download or read book Design and Implementation of 60 GHz CMOS Power Amplifiers written by Payam Masoumi Farahabadi and published by . This book was released on 2016 with total page 164 pages. Available in PDF, EPUB and Kindle. Book excerpt: The availability of an unlicensed 7 GHz bandwidth around 60 GHz offers great potential for establishment of high-data-rate short-range wireless communication links. Although previously left unutilized, recent advances in electronics enable the development of wireless transceivers at millimeter-wave frequencies. Despite offering a large bandwidth, the high signal attenuation caused by oxygen absorption in 60 GHz band requires the wireless transmitters to transmit signals with power as large as 27 dBm, so the receivers can detect greatly attenuated signals. Therefore, the design of power amplifiers capable of generating such large output powers proves to be a major challenge in the development of 60 GHz wireless transceivers, especially if CMOS technology is chosen for implementation of fully integrated 60 GHz wireless systems. In this dissertation, we present new architectures for power combining transformers, as well as new circuit topologies to improve the performance of 60 GHz power amplifiers implemented in CMOS technology. Although CMOS offers a higher level of integration and lower fabrication cost compared to high-speed compound semiconductor technologies, low supply and breakdown voltages, as well as operation near cutoff frequencies of MOSFETs make the design of power amplifier extremely challenging. Optimization of the efficiency/power performance of CMOS power amplifiers operating at millimeter-wave frequencies requires novelty in the design of active/passive structures. An overview on the technological advances and the challenges in millimeter-wave CMOS power amplifiers is presented by comparing previously reported active/passive power combination techniques. A comprehensive analysis and modeling of the matching circuits and on-chip spiral transformers are developed in order to estimate the passive power efficiency of the coupling circuits and power combining transformers. A new area-efficient power-combining configuration is proposed to achieve a high output power per occupied area. A 60 GHz power amplifier is fabricated utilizing the new combining technique with a measured output power of 18.8 dBm. Second we propose a new circuit topology to enable the capability of dual-mode operation. Also, a new enhancement technique is utilized in order to improve the gain-bandwidth product of cascode gain stages. Fabricated in 65 nm technology, the 60 GHz power amplifier could achieve measured maximum power added efficiency of 17.2% while delivering 18.1 dBm output power. Finally, we explore the utilization of a new dual-mode technique in a distributed active transformer power amplifier. A new power amplifier circuit topology and a new DAT layout technique is proposed in order to improve the power added efficiency and output power simultaneously. Fabricated in 65nm CMOS technology, the maximum measured gain of the 60 GHz power amplifier is 22 dB within a wide 3dB bandwidth of 14 GHz. A maximum saturated output power of 19.7 dBm is measured in high-power mode while a high power added efficiency of 25% is achieved.

Book CMOS Variable Gain Amplifier for Automatic Gain Control

Download or read book CMOS Variable Gain Amplifier for Automatic Gain Control written by YiDing Gu and published by . This book was released on 1993 with total page 164 pages. Available in PDF, EPUB and Kindle. Book excerpt: