Download or read book A Low Temperature Photoluminescence Study of Radiation Induced Defects in Silicon Carbide written by and published by . This book was released on 2006 with total page 402 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Photoluminescence from Irradiation Induced Defects in Silicon written by John Robert Noonan and published by . This book was released on 1974 with total page 332 pages. Available in PDF, EPUB and Kindle. Book excerpt: New information concerning the identification of radiative defects in Si is provided by three sets of experiments which study the photoluminescence from Si irradiated with electrons at low temperature (100K), Si subjected to ion implantations, and electron irradiations of Al and Ga doped Si. (Modified author abstract).
Download or read book Radiation Effects in Silicon Carbide written by A.A. Lebedev and published by Materials Research Forum LLC. This book was released on 2017 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book reviews the most interesting research concerning the radiation defects formed in 6H-, 4H-, and 3C-SiC under irradiation with electrons, neutrons, and some kinds of ions. The electrical parameters that make SiC a promising material for applications in modern electronics are discussed in detail. Specific features of the crystal structure of SiC are considered. It is shown that, when wide-bandgap semiconductors are studied, it is necessary to take into account the temperature dependence of the carrier removal rate, which is a standard parameter for determining the radiation hardness of semiconductors. The carrier removal rate values obtained by irradiation of various SiC polytypes with n- and p-type conductivity are analyzed in relation to the type and energy of the irradiating particles. The influence exerted by the energy of charged particles on how radiation defects are formed and conductivity is compensated in semiconductors under irradiation is analyzed. Furthermore, the possibility to produce controlled transformation of silicon carbide polytype is considered. The involvement of radiation defects in radiative and nonradiative recombination processes in SiC is analyzed. Data are also presented regarding the degradation of particular SiC electronic devices under the influence of radiation and a conclusion is made regarding the radiation resistance of SiC. Lastly, the radiation hardness of devices based on silicon and silicon carbide are compared.
Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1976 with total page 612 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book An Investigation of the Effects of Electron Irradiation and Annealing of 4H Silicon Carbide Using Low Temperature Photoluminescence Microscopy written by and published by . This book was released on 2000 with total page 144 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 704 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Defect Structure and Evolution in Silicon Carbide Irradiated to 1 Dpa SiC at 1100 C written by and published by . This book was released on 2002 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Transmission electron microscopy (TEM), swelling measurements, isochronal annealing, and thermal diffusivity testing were used to characterize the effects of radiation damage in SiC. Together, these techniques provided a comprehensive set of tools for observing and characterizing the structure and evolution of radiation-induced defects in SiC as a function of irradiation temperature and dose. In this study, two types of dense, crystalline, monolithic SiC were subjected to irradiation doses up to 1 dpa-SiC at a temperature of 1100 C, as well as post-irradiation annealing up to 1500 C. The microscopic defect structures observed by TEM were correlated to changes in the macroscopic dimensions, thermal diffusivity and thermal conductivity. The results demonstrated the value of using ultrapure [beta]SiC as an effective reference material to characterize the nature of expected radiation damage in other, more complex, SiC-based materials such as SiC/SiC composites.
Download or read book Silicon Carbide and Related Materials 1995 Proceedings of the Sixth INT Conference Kyoto Japan 18 21 September 1995 written by Shin-ichi Nakashima and published by CRC Press. This book was released on 1996 with total page 1158 pages. Available in PDF, EPUB and Kindle. Book excerpt: The special advantages of silicon carbide and related materials such as III-V nitrides in applications in hostile environments and for blue-light-emitting diodes continue to stimulate research and development activity. The International Conference on Silicon Carbide and related Materials is now the established forum for exchanging information on advances in this subject. This volume includes both invited and contributed papers covering the whole field of silicon carbide and related materials research, from the fundamental physics of these materials, through their growth, control of properties, characterization, surface and interface modification, device processing and fabrication, to simulation and modelling. Materials scientists, electronic engineers and solid state physicists who work with these materials, as well as those who are contemplating research in this expanding field, will find this a unique single source of information.
Download or read book Proceedings of the 18th International Conference on Defects in Semiconductors written by Masashi Suezawa and published by . This book was released on 1995 with total page 532 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Photoconductivity Studies of Radiation induced Defects in Silicon written by Rosa Ting-I. Young and published by . This book was released on 1972 with total page 96 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Carbide and Related Materials 2004 written by Roberta Nipoti and published by . This book was released on 2005 with total page 1134 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond are examples of wide-bandgap semiconductors having chemical, electrical and optical properties which make them very attractive for the fabrication of high-power and high-frequency electronic devices, as well as of light-emitters and sensors which have to operate under harsh conditions. The book comprises the proceedings of the 5th edition of the European Conference on Silicon Carbide and Related Materials, held from the 31st August to the 4th September 2004 in Bologna, Italy. This conference series here continued its tradition of being the main European forum for exchanging results, and discussing progress, between those university and industry researchers who are most active in the fields of SiC and related materials. Attendees at the conference highlighted the progress made in material growth technology, characterization of material properties and technological processing for electronic applications. Many electronics devices were presented: including high-voltage, high power-density and high-temperature components; as well as microwave components. Radiation-hard sensors were also presented.These proceedings fully document the latest experimental and theoretical understanding of the growth of bulk and epitaxial layers, the properties of the resultant materials, the development of suitable processes and of electronic devices that can best exploit and benefit from the outstanding physical properties that are offered by wide-bandgap materials.
Download or read book Energy Research Abstracts written by and published by . This book was released on 1984 with total page 1430 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiannual, with semiannual and annual indexes. References to all scientific and technical literature coming from DOE, its laboratories, energy centers, and contractors. Includes all works deriving from DOE, other related government-sponsored information, and foreign nonnuclear information. Arranged under 39 categories, e.g., Biomedical sciences, basic studies; Biomedical sciences, applied studies; Health and safety; and Fusion energy. Entry gives bibliographical information and abstract. Corporate, author, subject, report number indexes.
Download or read book Deep Level Transient Spectroscopy written by John Richard Troxell and published by . This book was released on 1984 with total page 317 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Carbide and Related Materials written by and published by . This book was released on 2000 with total page 868 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-09-23 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
Download or read book Japanese Science and Technology written by and published by . This book was released on 1986 with total page 724 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Photoconductivity of Radiation Induced Defects in Silicon written by Andrew L. Bates and published by . This book was released on 1972 with total page 42 pages. Available in PDF, EPUB and Kindle. Book excerpt:
