Download or read book A Design and Evaluation of an Ion Implantation System written by Stephen P. Plusch (1LT, USCG.) and published by . This book was released on 1970 with total page 144 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book A DESIGN AND EVALUATION OF AN ION IMPLANTATION SYSTEM written by and published by . This book was released on 1970 with total page 76 pages. Available in PDF, EPUB and Kindle. Book excerpt: A machine originally designed as a bakeable, monoenergetic sputtering apparatus was redesigned for use as an ion implantation system. Engineering modifications produced a virtually oil-free high-vacuum system. The base pressure of the system (unbaked) in its present configuration is 1 x 10 to the minus 8th power Torr. A 0.8-microamperes, 6.5-keV nitrogen ion beam was obtained. The machine, after modifications, was studied to determine its feasibility as an ion implantation system. If beam voltages greater than 10 kV are used, the machine will be suitable to perform small-area implants (areas approximately equal to 0.5 sqcm) with dopants available in gaseous form (non-corrosive) ranging in energy from 10 to 30 keV.

Download or read book Evaluation of a Low Energy Ion Implantation System written by Donald DeForrest Talada (2LT, USAF.) and published by . This book was released on 1974 with total page 130 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Ion Implantation Basics to Device Fabrication written by Emanuele Rimini and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 400 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion implantation offers one of the best examples of a topic that starting from the basic research level has reached the high technology level within the framework of microelectronics. As the major or the unique procedure to selectively dope semiconductor materials for device fabrication, ion implantation takes advantage of the tremendous development of microelectronics and it evolves in a multidisciplinary frame. Physicists, chemists, materials sci entists, processing, device production, device design and ion beam engineers are all involved in this subject. The present monography deals with several aspects of ion implantation. The first chapter covers basic information on the physics of devices together with a brief description of the main trends in the field. The second chapter is devoted to ion im planters, including also high energy apparatus and a description of wafer charging and contaminants. Yield is a quite relevant is sue in the industrial surrounding and must be also discussed in the academic ambient. The slowing down of ions is treated in the third chapter both analytically and by numerical simulation meth ods. Channeling implants are described in some details in view of their relevance at the zero degree implants and of the available industrial parallel beam systems. Damage and its annealing are the key processes in ion implantation. Chapter four and five are dedicated to this extremely important subject.

Download or read book Evaluation of a Low Energy Ion Implantation System written by Donald D. Talada and published by . This book was released on 1974 with total page 77 pages. Available in PDF, EPUB and Kindle. Book excerpt: A machine which was originally designed as a sputtering apparatus and redesigned for use as an ion implantation system, was modified, and used to implant N(+) into p-type silicon at low energy (24 keV). Electrical characteristics of the resulting implanted layer were determined by Hall effect measurements using the van der Pauw technique. A second implantation of N(+) into p-type silicon was done at higher energy (145 keV) using the system at the Aerospace Research Laboratories. The electrical characteristics of the resulting implanted layer, determined by conventional Hall effect measurements, were found to be comparable to those of the low energy implant. In addition, the possibility of using the low energy machine to implant boron and phosphorus was investigated. (Modified author abstract).

Download or read book Ion Implantation Science and Technology written by J.F. Ziegler and published by Elsevier. This book was released on 2012-12-02 with total page 509 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion Implantation Science and Technology: Second Edition, just like the first edition, serves as both an introduction and tutorial to the science, techniques, and machines involved in the subject. The book is divided into two parts - Part 1: Ion Implantation Science and Part 2: Ion Implantation Technology. Part 1 covers topics such as the stopping and range of ions in solids; ion implantation damage in silicon; experimental annealing and activation; and the measurement on ion implantation. Part 2 includes ion optics and focusing on implanter design; photoresist problems and particle contamination; ion implantation diagnostics and process control; and emission of ionizing radiation from ion implanters. The text is recommended for engineers who would like to be acquainted with the principles and processes behind ion implantation or make studies on the field.

Download or read book An Evaluation of High Energy Ion Implantation for Wear Studies written by Todd L. Rachel and published by . This book was released on 1991 with total page 238 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Ion Implantation Techniques written by H. Ryssel and published by Springer. This book was released on 1982-09 with total page 400 pages. Available in PDF, EPUB and Kindle. Book excerpt: In recent years, ion implantation has developed into the major doping technique for integrated circuits. Several series of conferences have dealt with the application of ion implantation to semiconductors and other materials (Thousand Oaks 1970, Garmisch-Partenkirchen 1971, Osaka 1974, Warwick 1975, Boulder 1976, Budapest 1978, and Albany 1980). Another series of conferences was devoted more to implantation equipment and tech­ niques (Salford 1977, Trento 1978, and Kingston 1980). In connection with the Third International Conference on Ion Implantation: Equipment and Tech­ niques, held at Queen's University,' Kingston, Ontario, Canada, July 8-11, 1980, a two-day instructional program was organized parallel to an implan­ tation conference for the first time. This implantation school concentra­ ted on aspects of implantation-equipment design. This book contains all lectures presented at the International Ion Implantation School organized in connection with the Fourth International Conference on Ion Implantation: Equipment and Techniques, held at the Convention Center, Berchtesgaden, Germany, September 13-17, 1982. In con­ trast to the first .school, the main emphasis in thiS school was placed on practical aspects of implanter operation and application. In three chap­ ters, various machine aspects of ion implantation (general concepts, ion sources, safety, calibration, dOSimetry), range distributions (stopping power, range profiles), and measuring techniques (electrical and nonelec­ tri ca 1 measu ri ng techni ques, annea 1 i ng) are di scussed. In the appendi x, a review of the state of the art in modern implantation equipment is given.

Download or read book Ion Implantation written by Ishaq Ahmad and published by BoD – Books on Demand. This book was released on 2017-06-14 with total page 154 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion implantation is one of the promising areas of sciences and technologies. It has been observed as a continuously evolving technology. In this book, there is a detailed overview of the recent ion implantation research and innovation along with the existing ion implantation technological issues especially in microelectronics. The book also reviews the basic knowledge of the radiation-induced defects production during the ion implantation in case of a semiconductor structure for fabrication and development of the required perfect microelectronic devices. The improvement of the biocompatibility of biomaterials by ion implantation, which is a hot research topic, has been summarized in the book as well. Moreover, advanced materials characterization techniques are also covered in this book to evaluate the ion implantation impact on the materials.

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 702 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Ion Implantation Technology 94 written by S. Coffa and published by Newnes. This book was released on 1995-05-16 with total page 1031 pages. Available in PDF, EPUB and Kindle. Book excerpt: The aim of these proceedings is to present and stimulate discussion on the many subjects related to ion implantation among a broad mix of specialists from areas as diverse as materials science, device production and advanced ion implanters.The contents open with a paper on the future developments of the microelectronics industry in Europe within the framework of the global competition. The subsequent invited and oral presentations cover in detail the following areas: trends in processing and devices, ion-solid interaction, materials science issues, advanced implanter systms, process control and yield, future trends and applications.

Download or read book Preliminary Evaluation of Ion Implantation as a Surface Treatment to Reduce Wear of Tool Bits written by F. A. Smidt and published by . This book was released on 1981 with total page 58 pages. Available in PDF, EPUB and Kindle. Book excerpt: The process of ion implantation is reviewed and concepts for use as a surface hardening technique for extending the life of machine tools are explored. It is concluded that for high speed steel tool materials a system based on implantation of Ti ions with subsequent reaction to form TiC in the surface layers should have merit. Exploratory tests showed that in machining tests of 4140 steel, an implanted M2 lathe tool bit required about 10 percent less power and has a wear rate approximately one-half that of the unimplanted tool. Tests of end mills proved inconclusive because the optimum Ti level for the implant was not reached. (Author).

Download or read book Ion Implantation written by Geoffrey Dearnaley and published by North-Holland. This book was released on 1973 with total page 826 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Ion Implantation and Beam Processing written by J. S. Williams and published by Academic Press. This book was released on 2014-06-28 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion Implantation and Beam Processing covers the scientific and technological advances in the fields of ion implantation and beam processing. The book discusses the amorphization and crystallization of semiconductors; the application of the Boltzmann transport equation to ion implantation in semiconductors and multilayer targets; and the high energy density collision cascades and spike effects. The text also describes the implantation of insulators (ices and lithographic materials); the ion-bombardment-induced compositions changes in alloys and compounds; and the fundamentals and applications of ion beam and laser mixing. The high-dose implantation and the trends of ion implantation in silicon technology are also considered. The book further tackles the implantation in gaAs technology and the contacts and interconnections on semiconductors. Engineers and people involved in microelectronics will find the book invaluable.

Download or read book Ion Implantation in Semiconductors written by Susumu Namba and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 716 pages. Available in PDF, EPUB and Kindle. Book excerpt: The technique of ion implantation has become a very useful and stable technique in the field of semiconductor device fabrication. This use of ion implantation is being adopted by industry. Another important application is the fundamental study of the physical properties of materials. The First Conference on Ion Implantation in Semiconductors was held at Thousand Oaks, California in 1970. The second conference in this series was held at Garmish-Partenkirchen, Germany, in 1971. At the third conference, which convened at Yorktown Heights, New York in 1973, the emphasis was broadened to include metals and insulators as well as semiconductors. This scope of the conference was still accepted at the fourth conference which was held at Osaka, Japan, in 1974. A huge number of papers had been submitted to this conference. All papers which were presented at the Fourth International Conference on Ion Implantation in Semiconductors and Other Materials are included in this proceedings. The success of this conference was due to technical presentations and discussions of 224 participants from 14 countries as well as to financial support from many companies in Japan. On behalf of the committee, I wish to thank the authors for their excellent papers and the sponsors for their financial support. The International Committee responsible for advising this conference consisted of B.L. Crowder, J.A. Davies, G. Dearna1ey, F.H. Eisen, Ph. G1otin, T. Itoh, A.U. MacRae, J.W. Mayer, S. Namba, I. Ruge, and F.L. Vook.

Download or read book The Basics of Ion Implantation written by Michael I. Current and published by . This book was released on 1997 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Ion Implantation Technology 92 written by D.F. Downey and published by Elsevier. This book was released on 2012-12-02 with total page 716 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion implantation technology has made a major contribution to the dramatic advances in integrated circuit technology since the early 1970's. The ever-present need for accurate models in ion implanted species will become absolutely vital in the future due to shrinking feature sizes. Successful wide application of ion implantation, as well as exploitation of newly identified opportunities, will require the development of comprehensive implant models. The 141 papers (including 24 invited papers) in this volume address the most recent developments in this field. New structures and possible approaches are described. The implications for ion implantation technology as well as additional observations of needs and opportunities are discussed. The volume will be of value to all those who are interested in acquiring a more complete understanding of the current developments in ion implantation processes and comprehensive implant models.