Download or read book 2013 IEEE International Integrated Reliability Workshop IIRW written by IEEE Staff and published by . This book was released on 2013-10-13 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Special Issue on the 2006 International Integrated Reliability Workshop written by Yuan Chen and published by . This book was released on 2007 with total page 118 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Special Issue Section on 2008 International Integrated Reliability Workshop IIRW written by Guoqiao Tao and published by . This book was released on 2009 with total page 41 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electromigration Inside Logic Cells written by Gracieli Posser and published by Springer. This book was released on 2016-11-26 with total page 134 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes new and effective methodologies for modeling, analyzing and mitigating cell-internal signal electromigration in nanoCMOS, with significant circuit lifetime improvements and no impact on performance, area and power. The authors are the first to analyze and propose a solution for the electromigration effects inside logic cells of a circuit. They show in this book that an interconnect inside a cell can fail reducing considerably the circuit lifetime and they demonstrate a methodology to optimize the lifetime of circuits, by placing the output, Vdd and Vss pin of the cells in the less critical regions, where the electromigration effects are reduced. Readers will be enabled to apply this methodology only for the critical cells in the circuit, avoiding impact in the circuit delay, area and performance, thus increasing the lifetime of the circuit without loss in other characteristics.

Download or read book Reliability Characterisation of Electrical and Electronic Systems written by and published by Elsevier. This book was released on 2014-12-24 with total page 274 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book takes a holistic approach to reliability engineering for electrical and electronic systems by looking at the failure mechanisms, testing methods, failure analysis, characterisation techniques and prediction models that can be used to increase reliability for a range of devices. The text describes the reliability behavior of electrical and electronic systems. It takes an empirical scientific approach to reliability engineering to facilitate a greater understanding of operating conditions, failure mechanisms and the need for testing for a more realistic characterisation. After introducing the fundamentals and background to reliability theory, the text moves on to describe the methods of reliability analysis and charactersation across a wide range of applications. Takes a holistic approach to reliability engineering Looks at the failure mechanisms, testing methods, failure analysis, characterisation techniques and prediction models that can be used to increase reliability Facilitates a greater understanding of operating conditions, failure mechanisms and the need for testing for a more realistic characterisation

Download or read book Hot Carrier Degradation in Semiconductor Devices written by Tibor Grasser and published by Springer. This book was released on 2014-10-29 with total page 518 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today’s most complicated reliability issues in semiconductor devices. Coverage includes an explanation of carrier transport within devices and book-keeping of how they acquire energy (“become hot”), interaction of an ensemble of colder and hotter carriers with defect precursors, which eventually leads to the creation of a defect, and a description of how these defects interact with the device, degrading its performance.

Download or read book Nanometer CMOS ICs written by Harry J.M. Veendrick and published by Springer. This book was released on 2017-04-28 with total page 639 pages. Available in PDF, EPUB and Kindle. Book excerpt: This textbook provides a comprehensive, fully-updated introduction to the essentials of nanometer CMOS integrated circuits. It includes aspects of scaling to even beyond 12nm CMOS technologies and designs. It clearly describes the fundamental CMOS operating principles and presents substantial insight into the various aspects of design implementation and application. Coverage includes all associated disciplines of nanometer CMOS ICs, including physics, lithography, technology, design, memories, VLSI, power consumption, variability, reliability and signal integrity, testing, yield, failure analysis, packaging, scaling trends and road blocks. The text is based upon in-house Philips, NXP Semiconductors, Applied Materials, ASML, IMEC, ST-Ericsson, TSMC, etc., courseware, which, to date, has been completed by more than 4500 engineers working in a large variety of related disciplines: architecture, design, test, fabrication process, packaging, failure analysis and software.

Download or read book 1999 IEEE International Integrated Reliability Workshop Final Report written by International Integrated Reliability Workshop and published by . This book was released on 1999 with total page 188 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Special Issue on the 2005 International Integrated Reliability Workshop written by International Integrated Reliability Workshop. 2005, South Lake Tahoe, Calif.. and published by . This book was released on 2006 with total page 230 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Metrology and Physical Mechanisms in New Generation Ionic Devices written by Umberto Celano and published by Springer. This book was released on 2016-06-18 with total page 191 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis presents the first direct observations of the 3D-shape, size and electrical properties of nanoscale filaments, made possible by a new Scanning Probe Microscopy-based tomography technique referred to as scalpel SPM. Using this innovative technology and nm-scale observations, the author achieves essential insights into the filament formation mechanisms, improves the understanding required for device optimization, and experimentally observes phenomena that had previously been only theoretically proposed.

Download or read book Reliability of high k metal gate field effect transistors considering circuit operational constraints written by Steve Kupke and published by BoD – Books on Demand. This book was released on 2016-06-06 with total page 125 pages. Available in PDF, EPUB and Kindle. Book excerpt: After many decades, the scaling of silicon dioxide based field-effect transistors has reached insurmountable physical limits due unintentional high gate leakage currents for gate oxide thicknesses below 2 nm. The introduction of high-k metal gate stacks guaranteed the trend towards smaller transistor dimensions. The implementation of HfO2, as high-k dielectric, also lead to a substantial number of manufacturing and reliability challenges. The deterioration of the gate oxide properties under thermal and electric stress jeopardizes the circuit operation and hence needs to be comprehensively understood. As a starting point, 6T static random access memory cells were used to identify the different single device operating conditions. The strongest deterioration of the gate stack was found for nMOS devices under positive bias temperature instability (PBTI) stress, resulting in a severe threshold voltage shift and increased gate leakage current. A detailed investigation of physical origin and temperature and voltage dependency was done. The reliability issues were caused by the electron trapping into already existing HfO2 oxygen vacancies. The oxygen vacancies reside in different charge states depending on applied stress voltages. This in return also resulted in a strong threshold voltage and gate current relaxation after stress was cut off. The reliability assessment using constant voltage stress does not reflect realistic circuit operation which can result in a changed degradation behaviour. Therefore, the constant voltage stress measurement were extended by considering CMOS operational constraints, where it was found that the supply voltage frequently switches between the gate and drain terminal. The additional drain (off-state) bias lead to an increased Vt relaxation in comparison to zero bias voltage. The off-state influence strongly depended on the gate length and became significant for short channel devices. The influence of the off-state bias on the dielectric breakdown was studied and compared to the standard assessment methods. Different wear-out mechanisms for drain-only and alternating gate and drain stress were verified. Under drain-only stress, the dielectric breakdown was caused by hot carrier degradation. The lifetime was correlated with the device length and amount of subthreshold leakage. The gate oxide breakdown under alternating gate and o-state stress was caused by the continuous trapping and detrapping behaviour of high-k metal gate devices.

Download or read book Integrated Reliability Workshop Final Report 1998 IEEE International written by and published by . This book was released on 1998 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Integrated Reliability Workshop Final Report 2007 IEEE International written by and published by . This book was released on with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Resistive Switching written by Daniele Ielmini and published by John Wiley & Sons. This book was released on 2015-12-28 with total page 784 pages. Available in PDF, EPUB and Kindle. Book excerpt: With its comprehensive coverage, this reference introduces readers to the wide topic of resistance switching, providing the knowledge, tools, and methods needed to understand, characterize and apply resistive switching memories. Starting with those materials that display resistive switching behavior, the book explains the basics of resistive switching as well as switching mechanisms and models. An in-depth discussion of memory reliability is followed by chapters on memory cell structures and architectures, while a section on logic gates rounds off the text. An invaluable self-contained book for materials scientists, electrical engineers and physicists dealing with memory research and development.

Download or read book Reliability Prediction for Microelectronics written by Joseph B. Bernstein and published by John Wiley & Sons. This book was released on 2024-02-20 with total page 404 pages. Available in PDF, EPUB and Kindle. Book excerpt: RELIABILITY PREDICTION FOR MICROELECTRONICS Wiley Series in Quality & Reliability Engineering REVOLUTIONIZE YOUR APPROACH TO RELIABILITY ASSESSMENT WITH THIS GROUNDBREAKING BOOK Reliability evaluation is a critical aspect of engineering, without which safe performance within desired parameters over the lifespan of machines cannot be guaranteed. With microelectronics in particular, the challenges to evaluating reliability are considerable, and statistical methods for creating microelectronic reliability standards are complex. With nano-scale microelectronic devices increasingly prominent in modern life, it has never been more important to understand the tools available to evaluate reliability. Reliability Prediction for Microelectronics meets this need with a cluster of tools built around principles of reliability physics and the concept of remaining useful life (RUL). It takes as its core subject the ‘physics of failure’, combining a thorough understanding of conventional approaches to reliability evaluation with a keen knowledge of their blind spots. It equips engineers and researchers with the capacity to overcome decades of errant reliability physics and place their work on a sound engineering footing. Reliability Prediction for Microelectronics readers will also find: Focus on the tools required to perform reliability assessments in real operating conditions Detailed discussion of topics including failure foundation, reliability testing, acceleration factor calculation, and more New multi-physics of failure on DSM technologies, including TDDB, EM, HCI, and BTI Reliability Prediction for Microelectronics is ideal for reliability and quality engineers, design engineers, and advanced engineering students looking to understand this crucial area of product design and testing.

Download or read book Springer Handbook of Semiconductor Devices written by Massimo Rudan and published by Springer Nature. This book was released on 2022-11-10 with total page 1680 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Springer Handbook comprehensively covers the topic of semiconductor devices, embracing all aspects from theoretical background to fabrication, modeling, and applications. Nearly 100 leading scientists from industry and academia were selected to write the handbook's chapters, which were conceived for professionals and practitioners, material scientists, physicists and electrical engineers working at universities, industrial R&D, and manufacturers. Starting from the description of the relevant technological aspects and fabrication steps, the handbook proceeds with a section fully devoted to the main conventional semiconductor devices like, e.g., bipolar transistors and MOS capacitors and transistors, used in the production of the standard integrated circuits, and the corresponding physical models. In the subsequent chapters, the scaling issues of the semiconductor-device technology are addressed, followed by the description of novel concept-based semiconductor devices. The last section illustrates the numerical simulation methods ranging from the fabrication processes to the device performances. Each chapter is self-contained, and refers to related topics treated in other chapters when necessary, so that the reader interested in a specific subject can easily identify a personal reading path through the vast contents of the handbook.

Download or read book Ageing of Integrated Circuits written by Basel Halak and published by Springer Nature. This book was released on 2019-09-30 with total page 228 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides comprehensive coverage of the latest research into integrated circuits’ ageing, explaining the causes of this phenomenon, describing its effects on electronic systems, and providing mitigation techniques to build ageing-resilient circuits.