Download or read book 2011 International Semiconductor Device Research Symposium written by IEEE Staff and published by . This book was released on 2011 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Beyond Si Based CMOS Devices written by Sangeeta Singh and published by Springer Nature. This book was released on with total page 331 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Nanocarbon Electronics written by Changjian Zhou and published by CRC Press. This book was released on 2020-12-30 with total page 374 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents a comprehensive review of research on applications of carbon nanotubes (CNTs) and graphene to electronic devices. As nanocarbons in general, and CNTs and graphene in particular, are becoming increasingly recognized as the most promising materials for future generations of electronic devices, including transistors, sensors, and interconnects, a knowledge gap still exists between the basic science of nanocarbons and their feasibility for cost-effective product manufacturing. The book highlights some of the issues surrounding this missing link by providing a detailed review of the nanostructure and electronic properties, materials, and device fabrication and of the structure–property–application relationships.
Download or read book Fundamentals of Tunnel Field Effect Transistors written by Sneh Saurabh and published by CRC Press. This book was released on 2016-10-26 with total page 216 pages. Available in PDF, EPUB and Kindle. Book excerpt: During the last decade, there has been a great deal of interest in TFETs. To the best authors’ knowledge, no book on TFETs currently exists. The proposed book provides readers with fundamental understanding of the TFETs. It explains the interesting characteristics of the TFETs, pointing to their strengths and weaknesses, and describes the novel techniques that can be employed to overcome these weaknesses and improve their characteristics. Different tradeoffs that can be made in designing TFETs have also been highlighted. Further, the book provides simulation example files of TFETs that could be run using a commercial device simulator.
Download or read book Bioelectronics written by Anuj Kumar and published by CRC Press. This book was released on 2022-12-08 with total page 413 pages. Available in PDF, EPUB and Kindle. Book excerpt: Bioelectronics is emerging as a new area of research where electronics can selectively detect, record, and monitor physiological signals. This is a rapidly expanding area of medical research, that relies heavily on multidisciplinary technology development and cutting-edge research in chemical, biological, engineering, and physical science. This book provides extensive information on the (i) fundamental concepts of bioelectronics, (ii) materials for the developments of bioelectronics such as implantable electronics, self-powered devices, bioelectronic sensors, flexible bioelectronics, etc, and (iii) an overview of the trends and gathering of the latest bioelectronic progress. This book will broaden our knowledge about newer technologies and processes used in bioelectronics.
Download or read book Artificial Intelligence written by Rashmi Priyadarshini and published by CRC Press. This book was released on 2022-09-23 with total page 301 pages. Available in PDF, EPUB and Kindle. Book excerpt: Artificial Intelligence: Applications and Innovations is a book about the science of artificial intelligence (AI). AI is the study of the design of intelligent computational agents. This book provides a valuable resource for researchers, scientists, professionals, academicians and students dealing with the new challenges and advances in the areas of AI and innovations. This book also covers a wide range of applications of machine learning such as fire detection, structural health and pollution monitoring and control. Key Features Provides insight into prospective research and application areas related to industry and technology Discusses industry- based inputs on success stories of technology adoption Discusses technology applications from a research perspective in the field of AI Provides a hands- on approach and case studies for readers of the book to practice and assimilate learning This book is primarily aimed at graduates and post- graduates in computer science, information technology, civil engineering, electronics and electrical engineering and management.
Download or read book International Semiconductor Device Research Symposium written by and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Non logic Devices in Logic Processes written by Yanjun Ma and published by Springer. This book was released on 2017-03-29 with total page 290 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book shows readers how to design semiconductor devices using the most common and lowest cost logic CMOS processes. Readers will benefit from the author’s extensive, industrial experience and the practical approach he describes for designing efficiently semiconductor devices that typically have to be implemented using specialized processes that are expensive, time-consuming, and low-yield. The author presents an integrated picture of semiconductor device physics and manufacturing techniques, as well as numerous practical examples of device designs that are tried and true.
Download or read book CMOS and Beyond written by Tsu-Jae King Liu and published by Cambridge University Press. This book was released on 2015-02-05 with total page 439 pages. Available in PDF, EPUB and Kindle. Book excerpt: Get up to speed with the future of logic switch design with this indispensable overview of the most promising successors to modern CMOS transistors. Learn how to overcome existing design challenges using novel device concepts, presented using an in-depth, accessible, tutorial-style approach. Drawing on the expertise of leading researchers from both industry and academia, and including insightful contributions from the developers of many of these alternative logic devices, new concepts are introduced and discussed from a range of different viewpoints, covering all the necessary theoretical background and developmental context. Covering cutting-edge developments with the potential to overcome existing limitations on transistor performance, such as tunneling field-effect transistors (TFETs), alternative charge-based devices, spin-based devices, and more exotic approaches, this is essential reading for academic researchers, professional engineers, and graduate students working with semiconductor devices and technology.
Download or read book High k Materials in Multi Gate FET Devices written by Shubham Tayal and published by CRC Press. This book was released on 2021-09-16 with total page 176 pages. Available in PDF, EPUB and Kindle. Book excerpt: High-k Materials in Multi-Gate FET Devices focuses on high-k materials for advanced FET devices. It discusses emerging challenges in the engineering and applications and considers issues with associated technologies. It covers the various way of utilizing high-k dielectrics in multi-gate FETs for enhancing their performance at the device as well as circuit level. Provides basic knowledge about FET devices Presents the motivation behind multi-gate FETs, including current and future trends in transistor technologies Discusses fabrication and characterization of high-k materials Contains a comprehensive analysis of the impact of high-k dielectrics utilized in the gate-oxide and the gate-sidewall spacers on the GIDL of emerging multi-gate FET architectures Offers detailed application of high-k materials for advanced FET devices Considers future research directions This book is of value to researchers in materials science, electronics engineering, semiconductor device modeling, IT, and related disciplines studying nanodevices such as FinFET and Tunnel FET and device-circuit codesign issues.
Download or read book Hot Carrier Degradation in Semiconductor Devices written by Tibor Grasser and published by Springer. This book was released on 2014-10-29 with total page 518 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today’s most complicated reliability issues in semiconductor devices. Coverage includes an explanation of carrier transport within devices and book-keeping of how they acquire energy (“become hot”), interaction of an ensemble of colder and hotter carriers with defect precursors, which eventually leads to the creation of a defect, and a description of how these defects interact with the device, degrading its performance.
Download or read book Handbook for III V High Electron Mobility Transistor Technologies written by D. Nirmal and published by CRC Press. This book was released on 2019-05-14 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots
Download or read book Nanowire Field Effect Transistors Principles and Applications written by Dae Mann Kim and published by Springer Science & Business Media. This book was released on 2013-10-23 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt: “Nanowire Field Effect Transistor: Basic Principles and Applications” places an emphasis on the application aspects of nanowire field effect transistors (NWFET). Device physics and electronics are discussed in a compact manner, together with the p-n junction diode and MOSFET, the former as an essential element in NWFET and the latter as a general background of the FET. During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEPROM and sensors are highlighted to pave the way for similar applications of NWFET. Modeling is discussed in close analogy and comparison with MOSFETs. Contributors focus on processing, electrostatic discharge (ESD) and application of NWFET. This includes coverage of solar and memory cells, biological and chemical sensors, displays and atomic scale light emitting diodes. Appropriate for scientists and engineers interested in acquiring a working knowledge of NWFET as well as graduate students specializing in this subject.
Download or read book Extreme Environment Electronics written by John D. Cressler and published by CRC Press. This book was released on 2017-12-19 with total page 1044 pages. Available in PDF, EPUB and Kindle. Book excerpt: Unfriendly to conventional electronic devices, circuits, and systems, extreme environments represent a serious challenge to designers and mission architects. The first truly comprehensive guide to this specialized field, Extreme Environment Electronics explains the essential aspects of designing and using devices, circuits, and electronic systems intended to operate in extreme environments, including across wide temperature ranges and in radiation-intense scenarios such as space. The Definitive Guide to Extreme Environment Electronics Featuring contributions by some of the world’s foremost experts in extreme environment electronics, the book provides in-depth information on a wide array of topics. It begins by describing the extreme conditions and then delves into a description of suitable semiconductor technologies and the modeling of devices within those technologies. It also discusses reliability issues and failure mechanisms that readers need to be aware of, as well as best practices for the design of these electronics. Continuing beyond just the "paper design" of building blocks, the book rounds out coverage of the design realization process with verification techniques and chapters on electronic packaging for extreme environments. The final set of chapters describes actual chip-level designs for applications in energy and space exploration. Requiring only a basic background in electronics, the book combines theoretical and practical aspects in each self-contained chapter. Appendices supply additional background material. With its broad coverage and depth, and the expertise of the contributing authors, this is an invaluable reference for engineers, scientists, and technical managers, as well as researchers and graduate students. A hands-on resource, it explores what is required to successfully operate electronics in the most demanding conditions.
Download or read book Contemporary Trends in Semiconductor Devices written by Rupam Goswami and published by Springer Nature. This book was released on 2022-02-16 with total page 313 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers evolution, concept and applications of modern semiconductor devices such as tunnel field effect transistors (TFETs), vertical super-thin body MOSFETs, ion sensing FETs (ISFETs), non-conventional solar cells, opto-electro mechanical devices and thin film transistors (TFTs). Comprising of theory, experimentation and applications of devices, the chapters describe state-of-art methods and techniques which shall be highly assistive in having an overall perspective on emerging technologies and working on a research area. The book is aimed at the scholars, enthusiasts and researchers who are currently working on devices in the contemporary era of semiconductor devices. Additionally, the chapters are lucid and descriptive and carry the potential of serving as a reference book for scholars in their undergraduate studies, who are looking ahead for a prospective career in semiconductor devices.
Download or read book Disruptive Wide Bandgap Semiconductors Related Technologies and Their Applications written by Yogesh Kumar Sharma and published by BoD – Books on Demand. This book was released on 2018-09-12 with total page 154 pages. Available in PDF, EPUB and Kindle. Book excerpt: SiC and GaN devices have been around for some time. The first dedicated international conference on SiC and related devices, "ICSCRM," was held in Washington, DC, in 1987. But only recently, the commercialization of SiC and GaN devices has happened. Due to its material properties, Si as a semiconductor has limitations in high-temperature, high-voltage, and high-frequency regimes. With the help of SiC and GaN devices, it is possible to realize more efficient power systems. Devices manufactured from SiC and GaN have already been impacting different areas with their ability to outperform Si devices. Some of the examples are the telecommunications, automotive/locomotive, power, and renewable energy industries. To achieve the carbon emission targets set by different countries, it is inevitable to use these new technologies. This book attempts to cover all the important facets related to wide bandgap semiconductor technology, including new challenges posed by it. This book is intended for graduate students, researchers, engineers, and technology experts who have been working in the exciting fields of SiC and GaN power devices.
Download or read book Gallium Nitride GaN written by Farid Medjdoub and published by CRC Press. This book was released on 2017-12-19 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology. A semiconductor commonly used in bright light-emitting diodes, GaN can serve as a great alternative to existing devices used in microelectronics. It has a wide band gap and high electron mobility that gives it special properties for applications in optoelectronic, high-power, and high-frequency devices, and because of its high off-state breakdown strength combined with excellent on-state channel conductivity, GaN is an ideal candidate for switching power transistors. Explores Recent Progress in High-Frequency GaN Technology Written by a panel of academic and industry experts from around the globe, this book reviews the advantages of GaN-based material systems suitable for high-frequency, high-power applications. It provides an overview of the semiconductor environment, outlines the fundamental device physics of GaN, and describes GaN materials and device structures that are needed for the next stage of microelectronics and optoelectronics. The book details the development of radio frequency (RF) semiconductor devices and circuits, considers the current challenges that the industry now faces, and examines future trends. In addition, the authors: Propose a design in which multiple LED stacks can be connected in a series using interband tunnel junction (TJ) interconnects Examine GaN technology while in its early stages of high-volume deployment in commercial and military products Consider the potential use of both sunlight and hydrogen as promising and prominent energy sources for this technology Introduce two unique methods, PEC oxidation and vapor cooling condensation methods, for the deposition of high-quality oxide layers A single-source reference for students and professionals, Gallium Nitride (GaN): Physics, Devices, and Technology provides an overall assessment of the semiconductor environment, discusses the potential use of GaN-based technology for RF semiconductor devices, and highlights the current and emerging applications of GaN.
