Download or read book SISPAD 97 written by International Conference on Simulation of Semiconductor Processes and Devices and published by . This book was released on 1997 with total page 353 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book 1997 International Conference on Simulation of Semiconductor Processes and Devices written by and published by . This book was released on 1997 with total page 353 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book 1997 International Conference on Simulation of Semiconductor Processes and Devices written by IEEE Electron Devices Society and published by Institute of Electrical & Electronics Engineers(IEEE). This book was released on 1997-01-01 with total page 353 pages. Available in PDF, EPUB and Kindle. Book excerpt: This conference is aimed at providing an opportunity for presentation and discussion of topics in process, device and circuit modelling for semiconductors. The proceedings contains all papers presented and should serve as a source for scientists and engineers engaged in research and development.
Download or read book Simulation of Semiconductor Processes and Devices 2001 written by Dimitris Tsoukalas and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 463 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes, SISPAD 01, held on September 5–7, 2001, in Athens. The conference provided an open forum for the presentation of the latest results and trends in process and device simulation. The trend towards shrinking device dimensions and increasing complexity in process technology demands the continuous development of advanced models describing basic physical phenomena involved. New simulation tools are developed to complete the hierarchy in the Technology Computer Aided Design simulation chain between microscopic and macroscopic approaches. The conference program featured 8 invited papers, 60 papers for oral presentation and 34 papers for poster presentation, selected from a total of 165 abstracts from 30 countries around the world. These papers disclose new and interesting concepts for simulating processes and devices.
Download or read book Simulation of Semiconductor Processes and Devices 1998 written by Kristin De Meyer and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 423 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the proceedings of the 1998 International Conference on Simulation of Semiconductor Processes and Devices and provides an open forum for the presentation of the latest results and trends in modeling and simulation of semiconductor equipment, processes and devices. Topics include: • semiconductor equipment simulation • process modeling and simulation • device modeling and simulation of complex structures • interconnect modeling • integrated systems for process, device, circuit simulation and optimisation • numerical methods and algorithms • compact modeling and parameter extraction • modeling for RF applications • simulation and modeling of new devices (heterojunction based, SET’s, quantum effect devices, laser based ...)
Download or read book International Conference on Simulation of Semiconductor Processes and Devices written by and published by . This book was released on 2005 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Simulation of Semiconductor Processes and Devices 2004 written by Gerhard Wachutka and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 387 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the proceedings of the 10th edition of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2004), held in Munich, Germany, on September 2-4, 2004. The conference program included 7 invited plenary lectures and 82 contributed papers for oral or poster presentation, which were carefully selected out of a total of 151 abstracts submitted from 14 countries around the world. Like the previous meetings, SISPAD 2004 provided a world-wide forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance. The variety of topics covered by the conference contributions reflects the physical effects and technological problems encountered in consequence of the progressively shrinking device dimensions and the ever-growing complexity in device technology.
Download or read book 1996 International Conference on Simulation of Semiconductor Processes and Devices written by IEEE Electron Devices Society and published by IEEE. This book was released on 1996 with total page 184 pages. Available in PDF, EPUB and Kindle. Book excerpt: This conference is aimed at providing an opportunity for the presentation and discussion of the recent topics in process, device and circuit modeling for semiconductors. The proceedings contains all papers presented at the conference which are carefully selected by experts in the field. A valuable source and indispensable for all scientists and engineers engaged in research and development in semiconductor devices, the proceedings include a wide range of TCAD algorithms to user interfacesProcess Modeling; Impurity Modeling; Future Device Modeling; Advanced Silicon Device Modeling; Equipment and Topography Modeling; Mesh Generation and Circuit Model
Download or read book 2002 International Conference on Simulation of Semiconductor Processes and Devices written by and published by Business Center for Academic. This book was released on 2002 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices written by and published by IEEE Computer Society Press. This book was released on 2003 with total page 329 pages. Available in PDF, EPUB and Kindle. Book excerpt: Taken from the proceedings of the 2003 International Conference of the Simulation of Semiconductor Processes and Devices (SISPAD 2003), this volume looks at electron devices.
Download or read book 2000 International Conference on Simulation of Semiconductor Processes and Devices written by IEEE Electron Devices Society and published by Institute of Electrical & Electronics Engineers(IEEE). This book was released on 2000 with total page 282 pages. Available in PDF, EPUB and Kindle. Book excerpt: The proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2000. Topics include: device simulation; quantum effects and novel devices; process simulation; lithography simulation; user interfaces and visualization; calibration; and more.
Download or read book Proceedings of the Fifth International Symposium of Process Physics and Modeling in Semiconductor Technology written by C. S. Murthy and published by The Electrochemical Society. This book was released on 1999 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book 1999 International Conference on Simulation of Semiconductor Processes and Devices written by Denshi Jōhō Tsūshin Gakkai (Japan) and published by . This book was released on 2000 with total page 187 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fabless Semiconductor Manufacturing written by Chinmay K. Maiti and published by CRC Press. This book was released on 2022-11-17 with total page 340 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book deals with 3D nanodevices such as nanowire and nanosheet transistors at 7 nm and smaller technology nodes. It discusses technology computer-aided design (TCAD) simulations of stress- and strain-engineered advanced semiconductor devices, including III-nitride and RF FDSOI CMOS, for flexible and stretchable electronics. The book focuses on how to set up 3D TCAD simulation tools, from mask layout to process and device simulation, including fabless intelligent manufacturing. The simulation examples chosen are from the most popular devices in use today and provide useful technology and device physics insights. In order to extend the role of TCAD in the More-than-Moore era, the design issues related to strain engineering for flexible and stretchable electronics have been introduced for the first time.
Download or read book Model Reduction for Circuit Simulation written by Peter Benner and published by Springer Science & Business Media. This book was released on 2011-03-25 with total page 317 pages. Available in PDF, EPUB and Kindle. Book excerpt: Simulation based on mathematical models plays a major role in computer aided design of integrated circuits (ICs). Decreasing structure sizes, increasing packing densities and driving frequencies require the use of refined mathematical models, and to take into account secondary, parasitic effects. This leads to very high dimensional problems which nowadays require simulation times too large for the short time-to-market demands in industry. Modern Model Order Reduction (MOR) techniques present a way out of this dilemma in providing surrogate models which keep the main characteristics of the device while requiring a significantly lower simulation time than the full model. With Model Reduction for Circuit Simulation we survey the state of the art in the challenging research field of MOR for ICs, and also address its future research directions. Special emphasis is taken on aspects stemming from miniturisations to the nano scale. Contributions cover complexity reduction using e.g., balanced truncation, Krylov-techniques or POD approaches. For semiconductor applications a focus is on generalising current techniques to differential-algebraic equations, on including design parameters, on preserving stability, and on including nonlinearity by means of piecewise linearisations along solution trajectories (TPWL) and interpolation techniques for nonlinear parts. Furthermore the influence of interconnects and power grids on the physical properties of the device is considered, and also top-down system design approaches in which detailed block descriptions are combined with behavioral models. Further topics consider MOR and the combination of approaches from optimisation and statistics, and the inclusion of PDE models with emphasis on MOR for the resulting partial differential algebraic systems. The methods which currently are being developed have also relevance in other application areas such as mechanical multibody systems, and systems arising in chemistry and to biology. The current number of books in the area of MOR for ICs is very limited, so that this volume helps to fill a gap in providing the state of the art material, and to stimulate further research in this area of MOR. Model Reduction for Circuit Simulation also reflects and documents the vivid interaction between three active research projects in this area, namely the EU-Marie Curie Action ToK project O-MOORE-NICE (members in Belgium, The Netherlands and Germany), the EU-Marie Curie Action RTN-project COMSON (members in The Netherlands, Italy, Germany, and Romania), and the German federal project System reduction in nano-electronics (SyreNe).
Download or read book 1996 International Conference on Simulation of Semiconductor Processes and Devices written by and published by . This book was released on 1996 with total page 184 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Hot Carrier Degradation in Semiconductor Devices written by Tibor Grasser and published by Springer. This book was released on 2014-10-29 with total page 518 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today’s most complicated reliability issues in semiconductor devices. Coverage includes an explanation of carrier transport within devices and book-keeping of how they acquire energy (“become hot”), interaction of an ensemble of colder and hotter carriers with defect precursors, which eventually leads to the creation of a defect, and a description of how these defects interact with the device, degrading its performance.
